Physics of the Solid State
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Fabrication of High-Quality Josephson Junctions Based on Nb|Al-AlN|NbN
 Chekushkin A. M.1, Filippenko L. V.1,  Fominskiy M. Yu.1, Koshelets V. P.1
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
Email: chekushkin@hitech.cplire.ru

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A description of the fabrication technology of high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors Vg=3.2-3.4 mV, tunnel current density up to J 35 kA/cm2, quality factor Rj/Rn (ratio of subgap resistance to normal-state resistance) up to 30, junction area up to 1 μm2. The SIS junctions are integrated into the NbTiN|SiO2|Al microstrip line. Keywords: superconducting devices, superconductor-insulator-superconductor tunnel junction, plasma etching.
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