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Fabrication of High-Quality Josephson Junctions Based on Nb|Al-AlN|NbN

Russian version

DOI: 10.21883/PSS.2022.10.54222.49HH

Chekushkin A. M.¹, Filippenko L. V.¹, Fominskiy M. Yu.¹, Koshelets V. P.¹

¹Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

Email: chekushkin@hitech.cplire.ru

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Abstract
References
Статистика просмотров

A description of the fabrication technology of high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors V_g=3.2-3.4 mV, tunnel current density up to J 35 kA/cm², quality factor R_j/R_n (ratio of subgap resistance to normal-state resistance) up to 30, junction area up to 1 μm². The SIS junctions are integrated into the NbTiN|SiO₂|Al microstrip line. Keywords: superconducting devices, superconductor-insulator-superconductor tunnel junction, plasma etching.

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