Studies have been carried out on the effect of heating and a strong field, but pre-breakdown, effects on high-frequency characteristics of the impedance of heteroepitaxial structures Ni-Ba_0.8Sr_0.2TiO₃-pSi with a ferroelectric thickness of 50 nm. It was shown, that regardless of the polarity of the field stress, characteristics shifted towards a positive bias, and the width of hysteresis loops decreased; plateau levels remained virtually unchanged. Heating up to 121^oC led to a change in levels of the upper plateau of characteristics: for the capacity it decreased, and for the conductivity it increased; branches on the loop not only narrowed and shifted, but changed places in comparison with the original dependence (loop reverse). These results can be explained: under the field action, by the generation of additional electronic states, localized in the buffer layer at the Si-Ba_1-xSr_xTiO₃ interface, and by heating, by the appearance of delay effects due to the development of fluctuation processes, underlying the smearing of the phase transition from ferroelectric to paraelectric condition. Keywords: High-frequency field characteristics of the impedance, the field stress, hysteresis loops, the generation of additional localized electronic states, delay effects, fluctuation processes, smearing of the phase transition.

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Дата начала обработки статистических данных - 27 января 2016 г.