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Optical properties of ferroelectric films Hf_xZr_yO₂ and La : Hf_xZr_yO₂ according to ellipsometry data

DOI: 10.21883/EOS.2022.03.53556.2477-21

Kruchinin V.N.¹, Spesivtsev E.V.¹, Rykhlitsky S.V.¹, Gritsenko V.A.^1,2,3, Mehmood F.⁴, Mikolajick T.^4,5, Schroeder U.⁴

¹Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
²Novosibirsk State University, Novosibirsk, Russia
³Novosibirsk State Technical University, Novosibirsk, Russia
⁴NaMLab gGmbH, Dresden, Germany
⁵Chair of Nanoelectronics, TU Dresden, Dresden, Germany

Email: kruch@isp.nsc.ru, evs@isp.nsc.ru, rhl@isp.nsc.ru, grits@isp.nsc.ru, Furgan.Mehmood@namlab.com, Thomas.Mikolajick@namlab.com, Uwe.Schroeder@namlab.com

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Abstract
References
Статистика просмотров

Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films Hf_xZr_yO₂ and lanthanum-alloyed hafnia-zirconium oxide films La : Hf_xZr_yO₂. Fluctuations of thickness in Hf_xZr_yO₂ do not exceed 3.5%, fluctuations of thickness in La : Hf_xZr_yO₂ films - 3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, Hf_xZr_yO₂ films contain 46% HfO₂, 54% ZrO₂, La : Hf_xZr_yO₂ films contain 47.5% HfO₂, 52.4% ZrO₂, 2.5% La₂O₃. Keywords: ferroelectric, refraction index, spectral ellipsometry, effective-medium theory.

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