Metal-insulator phase transition in thin films of vanadium dioxide with zirconium impurity
Andreev V.N.1, Klimov V.A.1
1Ioffe Institute, St. Petersburg, Russia
Email: vn.andreev.solid@mail.ioffe.ru
It was found that doping of thin polycrystalline films of vanadium dioxide with zirconium was accompanied by a lower temperature of transition of the metallic R-phase to the insulator M1 phase. The electrical conductivity hopping caused by the phase transition declines with the growth of zirconium concentration. To explain the temperature dependence of electroconductivity of insulator M1-phase, a hopping conductivity model was applied, taking into account the impact of thermal oscillations of atoms at the resonance integral. Keywords: phase transition, electroconductivity, doping, polaron.
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