The influence of the reactive gas (oxygen) partial pressure in the deposition chamber and the substrate temperature on the electrical conductivity, charge carrier mobility, and thermoelectric power of zinc oxide (ZnO) thin films obtained by ion-beam sputtering has been studied. The synthesized films are nanocrystalline and are characterized by a wurtzite hexagonal crystal lattice and a texture with a predominant <0001> axis perpendicular to the film plane. Electron microscopic analysis confirmed the formation of a nanocrystalline structure with a characteristic growth texture. It has been established that the dominant charge transport mechanism in the studied samples is variable-range hopping conduction through localized states near the Fermi level, as confirmed by the linearity of the ln(ρ/ρ_o)(T^-1/4) and S(T^1/2) dependences, as well as by the low values of the density of localized states at the Fermi level g(E_F)~10¹⁷ eV^-1·cm^-3. Estimates of the main model parameters of the studied films were carried out: the characteristic temperature B, the density of states at the Fermi level g(E_F), the hopping length, and the localization radius. It was found that an increase in the oxygen partial pressure in the gas mixture leads to a decrease in g(E_F), while an increase in the substrate temperature promotes the growth of the density of electronic states. Keywords: zinc oxide, electrical properties, thermoelectric power, density of electronic states.