Physics of the Solid State
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Structure and kinetics of disproportionation of GeO thin films
Astankova K. N.
1, Kislukhin N. A.2, Azarov I. A.
1,3, Prosvirin I. P.
4, Volodin V. A.
1,3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
4Boreskov Institute of Catalysis, Siberian Branch of RAS, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
4Boreskov Institute of Catalysis, Siberian Branch of RAS, Novosibirsk, Russia
Email: astankova-kn@isp.nsc.ru, nikitkis2002@gmail.com, azarov_ivan@mail.ru, prosvirin@catalysis.ru, volodin@isp.nsc.ru
The study object is thin films (~10-15 nm) of germanium monoxide obtained by thermal evaporation in vacuum of composite GeO2 layers containing Ge nanoclusters and deposition of GeO vapor on a cold substrate. Based on X-ray photoelectron spectroscopy data, it has been established that the short-range order structure of germanium monoxide films can be described by the random bonding model. The stoichiometric parameter x in GeOx films was 1.07±0.05. Raman spectroscopy and infrared spectroscopy data indicate different depths of the GeO disproportionation process during annealing from 5 to 30 minutes and a temperature of 200-400oC in vacuum. Annealing for 45 minutes or more at the same temperatures led to partial oxidation of amorphous Ge clusters in the oxide matrix. Keywords: germanium monoxide, germanium nanoclusters, random bonding model, disproportionation reaction, X-ray photoelectron spectroscopy, Raman spectroscopy, IR spectroscopy.
- M. Shang, X. Chen, B. Li, J. Niu. ACS Nano 14, 3678 (2020)
- J. Hwang, C. Jo, M. G. Kim, J. Chun, E. Lim, S. Kim, S. Jeong, Y. Kim, J. Lee. ACS Nano 9, 5, 5299 (2015)
- V.G. Dyskin, M.U. Dzhanklych. Appl. Sol. Energy 57, 252 (2021)
- A.V. Shaposhnikov, T.V. Perevalov, V.A. Gritsenko, C.H. Cheng, A. Chin. Appl. Phys. Lett. 100, 243506 (2012)
- V.A. Volodin, G.N. Kamaev, M. Vergnat. Phys. Status Solidi Rapid Res. Lett. 14, 2000165 (2020)
- K.N. Astankova, E.B. Gorokhov, V.A. Volodin, D.V. Marin, I.A. Azarov, A.V. Latyshev. Rossijskie nanotekhnologii, 11 5-6, 59 (2016). (in Russian)
- D.A. Dzhishiashvili, V.V. Gobronidze, Z.V. Berishvili, Z.N. Shiolashvili, G.A. Skhiladze, L.G. Sakhvadze. Tr. Mezhdunar. konf. "Sobremennye informatsionnye i elektronnye tekhnologii". Odessa, Ukraina, 2005, s. 371. (in Russian)
- F.A. Nazarenkov, V.A. Sterligov. Thin Solid Films 254, 164 (1995)
- K.N. Astankova, V.A. Volodin, I.A. Azarov. FTP 54, 12, 1296 (2020). (in Russian)
- S.K. Wang, H.-G. Liu, A. Toriumi. Appl. Phys. Lett. 101, 061907 (2012)
- E.B. Gorokhov, V.V. Grischenko. V sb.: Ellipsometriya: teoriya, metody, prilozheniya. Novosibirsk, Nauka, 1987, p. 147. (in Russian)
- F. Zhang, V.A. Volodin, K.N. Astankova, P.V. Shvets, A.Yu. Goikhman, M. Vergnat. J. Non-Cryst. Solids 631, 122929 (2024)
- F. Zhang, M. Vergnat, V.A. Volodin. JTPh 93, 8, 1209 (2023)
- K. Prabhakaran, F. Maeda, Y. Watanabe, T. Ogino. Appl. Phys. Lett. 76, 16, 2244 (2000)
- Yu.N. Novikov, V.A. Gritsenko. FTT 54, 3, 465 (2012). (in Russian)
- V.A. Gritsenko, UFN 178, 7, 727 (2008). (in Russian)
- K. Vijayarangamuthu, S. Rath, D. Kabiraj, D.K. Avasthi, P.K. Kulriya, V.N. Singh, B.R. Mehta. J. Vac. Sci. Technol. A 27, 731 (2009)
- F. Zhang, V.A. Volodin, K.N. Astankova, G.N. Kamaev, I.A. Azarov, I.P. Prosvirin, M. Vergnat. Results in Chem. 4, 100461 (2022)
- Laser Pulses --- Theory, Technology, and Applications / Ed. I. Peshko, INTECH, Rijeka (2012). Chap. 13. P. 383
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.