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Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes
Russian version
DOI: 10.21883/PSS.2022.07.54598.321
Fedotov A. K.1, Kharchanka A. A.1, Gumiennik U. E.1,2, Fedotova J. A.1, Ronassi A. A.3, Fedotov A. S. 4,5, Prischepa S. L. 6,7, Chichkov M. V. 8, Malinkovich M. D. 8
1Institute for Nuclear Problems of Belarusian State University, Belarus
2AGH University of Science and Technology, Krakow, Poland
3Payaame Noor University in Borujerd, Iran
4Belarusian State University, Belarus
5University of Tyumen, Russia
6Belarusian State University of Informatics and Radioelectronics, Belarus
7National Research Nuclear University MEPhI, Russia
8National University of Science and Technology MISiS, Russia
Email: akf1942@gmail.com, Julia@hep.by, fedotov.alehandro@gmail.com, prischepa@bsuir.by
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Temperature and magnetic field dependencies of sheet resistance R#(T,B) in polycrystalline CVD graphene, investigated in the range of 2≤ T≤ 300 K and magnetic fields 0≤ B≤ 8 T, allowed to determine carrier transport mechanisms in single-layered and twisted CVD graphene. It is shown that for R#(T,B) curves for such samples are described by the interference quantum corrections to the Drude conductivity independently on type of precursor and peculiarities of graphene transfer from Cu foil onto the various substrates (glass or SiO2). The twisted CVD graphene samples have demonstrated additional contribution of 2D hopping conductivity into the R#(T,B) dependencies. Keywords: graphene, single layer, twisted layers, CVD, carrier transport, magnetoresistance.
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