Features of the low-temperature conductivity of organometallic perovskite films with the introduction of graphene oxide particles into them
Ovezov M. K.1, Aleshin P. A.1, Aleshin A. N.1
1Ioffe Institute, St. Petersburg, Russia
Email: strontiumx94@gmail.com, aleshinp@gmail.com, aleshin@transport.ioffe.ru

The influence of the introduction of graphene oxide (GO) particles on the low-temperature conductivity of composite films based on organometallic perovskites CH3NH3PbBr3 with GO particles with a concentration of 0-5 wt.% has been studied. It has been established that the introduction of GO particles into ITO/CH3NH3PbBr3 : GO/ITO/glass films manifests itself in a decrease in the activation energy of the temperature dependence of the conductance. A sharp increase by 5-6 orders of magnitude of the resistance of the films at temperatures below 150 K was found. It is assumed that in the studied CH3NH3PbBr3 : GO systems at T>150 K, the hopping mechanism of transport predominates, associated with the capture and accumulation of charge carriers in GO particles, and the increase in resistance at T<150 K may be due to the structural phase transition characteristic of organometallic perovskites in this temperature range. Keywords: organometallic perovskites, graphene oxide, electrical conductivity, low-temperature transport.
  1. L. Schmidt-Mende, V. Dyakonov, S. Olthof, F. Unlu, K. Moritz Trong L\^e, S. Mathur, A.D. Karabanov, D.C. Lupascu, L.M. Herz, A. Hinderhofer, F. Schreiber, A. Chernikov, D.A. Egger, O. Shargaieva, C. Cocchi, E. Unger, M. Saliba, M.M. Byranvand, M. Kroll, F. Nehm, K. Leo, A. Redinger, J. Hocker, T. Kirchartz, J. Warby, E. Gutierrez-Partida, D. Neher, M. Stolterfoht, U. Wurfel, M. Unmussig, J. Herterich, C. Baretzky, J. Mohanraj, M. Thelakkat, C. Maheu, W. Jaegermann, T. Mayer, J. Rieger, T. Fauster, D. Niesner, F. Yang, S. Albrecht, T. Riedl, A. Fakharuddin, M. Vasilopoulou, Y. Vaynzof, D. Moia, J. Maier, M. Franckevicius, V. Gulbinas, R.A. Kerner, L. Zhao, B.P. Rand, N. Gluck, T. Bein, F. Matteocci, L.A. Castriotta, A. Di Carlo, M. Scheffler, C. Draxl. APL Mater. 9, 109202 (2021)
  2. A. Younis, C.-Ho Lin, X. Guan, S. Shahrokhi, C.-Yu Huang, Y. Wang, T. He, S. Singh, L. Hu, J.R. D. Retamal, Jr-H. He, T. Wu. Adv. Mater. 33, 2005000 (2021)
  3. A.K. Chilvery, A.K. Batra, B. Yang, K. Xiao, P. Guggilla, M.D. Aggarwal, R. Surabhi, R.B. Lal, J.R. Currie, B.G. Penn. J. Photon. Energy 5, 057402 (2015)
  4. C.C. Stoumpos, C.D. Malliakas, M.G. Kanatzidis. Inorg. Chem. 52, 9019 (2013)
  5. A. Pisoni, J. Jacimovic, O.S. Barisic, M. Spina, R. Gaal, L. Forro, E. Horvath. J. Phys. Chem. Lett. 5, 2488 (2014)
  6. A.M. Ershova, M.K. Ovezov, I.P. Scherbakov, A.N. Aleshin. Physics of the Solid State, 61, 103 (2019)
  7. H.S. Jung, N.-G. Park. Small 11, 10 (2015)
  8. X. Wu, H. Yu, J. Cao. AIP Advances 10, 085202 (2020)
  9. H. He, J. Klinowski, M. Forster, A. Lerf. Chem. Phys. Lett. 287, 53 (1998)
  10. A.V. Arkhipov, G.V. Nenashev, A.N. Aleshin. Physics of the Solid State, 63, 525, (2021)
  11. S.M. Sze. Physics of semiconductor devices. 2nd ed. John Wiley \& Sons (1981)

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