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Resonant reflection of light from a periodic system of quasi-two-dimensional layers of Bi nanoparticles in GaAs
Russian version
Polenok E. D.1,2, Preobrazhenskii V. V. 3, Putyato M. A. 3, Semyagin B. R. 3, Potapovich N. S. 1, Khvostikov V.P. 1, Ushanov V. I. 1, Chaldyshev V.V. 1
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: e.d.polenok@mail.ioffe.ru, pvv@isp.nsc.ru, puma@isp.nsc.ru, sbr@isp.nsc.ru, nspotapovich@mail.ioffe.ru, vlkhv@scell.ioffe.ru, decorus2009@mail.ru, chald.gvg@mail.ioffe.ru
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We demonstrate the possibility of creating and have studied the optical properties of a structure, which is composed of an epitaxial GaAs matrix with an embedded periodic sequence of quasi-two-dimensional layers of Bi nanoinclusions. In the optical reflectance spectra of this structure, we reveal a resonant peak originating from the Bragg diffraction of electromagnetic waves scattered on the system of the nanoinclusions. The significant amplitude of the reflection peak (approximately 15% at normal light incidence) is due to the fact that the wavelength of the Bragg resonance is close to the wavelength of the localized surface plasmon resonance in the system of bismuth nanoparticles embedded in the gallium arsenide matrix. Keywords: GaAs, Bi, optical properties, plasmon resonance, nanoparticles.
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