Depolarization currents in the BiFeO3/TiO2(Nt)Ti structure depending on the exposure time and the magnitude of the polarizing voltage
Gajiev G.M.1, Ramazanov Sh. M.1, Abakarova N.S.1, Efendieva T.N.1
1Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, Makhachkala, Russia
The behavior of depolarization currents in the BiFeO3/TiO2(Nt)Ti film structure after removing external voltage was studied as a function of the exposure duration (0-4 s) and voltage (30-55 V). An ambiguous relationship between the relaxation time and polarization time was established, caused by leakage currents and the processes of carrier trapping/emission to defect levels (oxygen vacancies) of the sample. Relaxation processes and leakage currents significantly determine the electrical properties of BiFeO3-based memristor structures. Characteristic relaxation times and their relationship with the state of traps allow us to consider the depolarization current analysis technique as an effective tool for diagnosing the quality of films and assessing their operational limits. Keywords: BiFeO3, depolarization current, nanotubes, thin films, ferroelectric memristor.
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