Nature of defects responsible for the red shift of the fundamental absorption edge and the increase in the refractive index of irradiated Si3N4
Gritsenko V.A.1,2, Novikov Yu.N.1, Gismatulin A.A.1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Email: grits@isp.nsc.ru, nov@isp.nsc.ru, aagismatulin@isp.nsc.ru
The atomic structure of amorphous silicon nitride Si3N4 irradiated with boron (B+) ions is studied using photoelectron spectroscopy and infrared absorption. Irradiation with B+ ions is accompanied by a red shift of the fundamental absorption edge of Si3N4. Irradiation with B+ ions leads to a broadening of the Si 2s atomic level toward lower energies, indicating the formation of Si 2s bonds. The formation of Si-Si bonds due to the splitting of bonding and antibonding orbitals leads to a decrease in the bandgap and an increase in the refractive index. Keywords: silicon nitride, Si3N4, fundamental absorption edge, refractive index, Si-Si bonds.
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