Investigation of ultimate energy capabilities of powerful ultraviolet (370 nm) matrix emitters: current and temperature factors
Chernyakov A. E. 1, Zakgeim A. L. 1, Ivanon A. E. 1, Talnishnikh N. A. 1, Shabunina E. I.2
1Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: chernyakov@mail.ioffe.ru
An experimental study was conducted on the energy, spectral, and thermal characteristics of a powerful ultraviolet (λ=370 nm) matrix light-emitting diode CBM-120-UV based on AlInGaN. In the current range of 1-18 A mapping of brightness, temperature, emission spectrum, and current distributions was performed across both the matrix area and individual emitting elements. Temperature gradients across the matrix area were observed at currents above 9 A, yet these did not lead to noticeable current distribution nonuniformity among the parallel-connected elements, despite the known temperature dependence of forward voltage. The obtained results are crucial for assessing the ultimate energy capabilities of UV emitters, optimizing their design, and determining operational modes. Keywords: AlInGaN, light diode, UV, matrix emitter, temperature gradients, electrical luminescence, short-range field of radiation.
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