Spatially periodic hybrid structures based on opal films coated with a-Si:C:H layer: synthesis and emitting properties
Grudinkin S. A. 1, Feoktistov N.A.1, Golubev V. G. 1, Pavlov S. I. 1, Dukin A. A. 1, Pevtsov A. B. 1
1Ioffe Institute, St. Petersburg, Russia
Email: grudink@gvg.ioffe.ru, feokt@gvg.ioffe.ru, Golubev@gvg.ioffe.ru, Pavlov_sergey@mail.ioffe.ru, Dookin@gvg.ioffe.ru, Pevtsov@gvg.ioffe.ru

PDF
The luminescent response of a two-dimensional photonic crystal based on a hybrid structure formed from a synthetic opal film covered with an emitting layer of hydrogenated amorphous silicon-carbon alloy has been studied. Spectral-angular dependencies of photoluminescence intensity of the synthesized structure were recorded using spectral Fourier microscopy. In the spectral-angular dependencies of photoluminescence intensity in the visible wavelength range, characteristic peaks were observed, the appearance of which is associated with the interaction of radiation from a-Si:C:H nanoclusters with the radiating modes of the two-dimensional photonic crystal, characterized by a low group velocity. Keywords: photonic crystal, Fourier transform spectral microscopy, photoluminescence, hydrogenated amorphous silicon-carbon alloy.
  1. Z. Qian, L. Shan, X. Zhang, Q. Liu, Y. Ma, Q. Gong, Y. Gu. Photonics, 2, 1 (2021). DOI: 10.1186/s43074-021-00043-z
  2. A. Mahdavi, G. Sarau, J. Xavier, T.K. Paraiso, S. Christiansen, F. Vollmer. Scientific Reports, 6 (1), 25135 (2016). DOI: 10.1038/srep25135
  3. A.I. Kuznetsov, M.L. Brongersma, J. Yao, M. K. Chen, U. Levy, D.P. Tsai, N.I. Zheludev, A. Faraon, A. Arbabi, N. Yu, D. Chanda, K.B. Crozier, A.V. Kildishev, H. Wang, J.K.W. Yang, J.G. Valentine, P. Genevet, J.A. Fan, O.D. Miller, A. Majumdar, J.E. Froch, D. Brady, F. Heide, A. Veeraraghavan, N. Engheta, A. Alu, A. Polman, H.A. Atwater, P. Thureja, R. Paniagua-Dominguez, S.T. Ha, A.I. Barreda, J.A. Schuller, I. Staude, G. Grinblat, Y. Kivshar, S. Peana, S.F. Yelin, A. Senichev, V.M. Shalaev, S. Saha, A. Boltasseva, J. Rho, D.K. Oh, J. Kim, J. Park, R. Devlin, R.A. Pala. ACS Photonics, 11 (3), 816 (2024). DOI: 10.1021/acsphotonics.3c00457
  4. D.V. Yurasov, A.V. Novikov, S.A. D'yakov, M.V. Stepihova, A.N. Yablonskij, S.M. Sergeev, D.E. Utkin, Z.F. Krasil'nik. FTP, 54 (8), 822 (2020) (in Russian). DOI: 10.21883/FTP.2020.08.49633.10
  5. A.V. Peretokin, D.V. Yurasov, M.V. Stepikhova, M.V. Shaleev, A.N. Yablonskiy, D.V. Shengurov, S.A. Dyakov, E.E. Rodyakina, Z.V. Smagina, A.V. Novikov. Nanomaterials, 13 (1), 1678 (2023). DOI: 0.3390/nano13101678
  6. V.A. Vasil'ev, A.S. Volkov, E. Musabekov, E.I. Terukov, V.E. Chelnokov, S.V. Chernyshev, Yu.M. Shernyakov. FTP, 24 (4), 710 (1990) (in Russian)
  7. P. Jiang, J. Bertone, K.S. Hwang, V. Colvin. Chem. Mater., 11 (8), 2132 (1999). DOI: 10.1021/cm990080+
  8. M.V. Rybin, A.V. Zherzdev, N.A. Feoktistov, A.B. Pevtsov. Phys. Rev. B, 95 (16), 165118 (2017). DOI: 10.1103/PhysRevB.95.165118
  9. R. Wagner, L. Heerklotz, N. Kortenbruck, F. Cichos. Appl. Phys. Lett., 101 (8), 081904 (2012). DOI: 10.1063/1.4746251
  10. S.G. Tikhodeev, A. Yablonskii, E. Muljarov, N.A. Gippius, T. Ishihara. Phys. Rev. B, 66 (4), 045102 (2002). DOI: 10.1103/PhysRevB.66.045102
  11. S. Dyakov, N. Gippius, M. Voronov, S. Yakovlev, A. Pevtsov, I. Akimov, S. Tikhodeev. Phys. Rev. B, 96, 045426 (2017). DOI: 10.1103/PhysRevB.96.045426
  12. S.A. Dyakov, D.M. Zhigunov, A. Marinins, M.R. Shcherbakov, A.A. Fedyanin, A.S. Vorontsov, P.K. Kashkarov, S. Popov, M. Qiu, M. Zacharias, S.G. Tikhodeev, N.A. Gippius. Phys. Rev. B, 93 (20), 205413 (2016). DOI: 10.1103/PhysRevB.93.205413
Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru