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Generation and Detection of Pulsed Terahertz Radiation Using Photoconductive Semiconductor Antennas Based on LT-InxGa1-xN/GaN
Russian version
Burmistrov E. R. 1,2, Avakyants L. P.1, Parfentieva N. A.2, Gavrilin S. N.2
1Department of Physics, Lomonosov Moscow State University, Moscow, Russia
2Moscow State University of Civil Engineering, Moscow, Russia
Email: burmistrover@my.msu.ru, avakyants@physics.msu.ru, parfentevana@mgsu.ru, GavrilinSN@mgsu.ru
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The generation and detection of terahertz (THz) radiation using photoconductive antennas based on low-temperature grown LT-InxGa1-xN/GaN heterostructures were investigated. Multilayer structures grown by metal-organic chemical vapor deposition demonstrated efficient conversion of femtosecond laser radiation into THz pulses 8· 10-5. At an optical pumping power of 57 mW and bias voltage of 15 V, an average THz radiation output power of 4.5 μW was achieved. The frequency spectrum of the emission is concentrated in the range 1.0-1.2 THz with a bandwidth up to 3 THz. Temporal and spectral characteristics of the signal were studied, as well as the dependencies of THz radiation power on pumping and bias parameters. The results confirm the prospects of using LT-InxGa1-xN/GaN for creating THz sources and detectors, opening new possibilities for THz spectroscopy and optoelectronics applications. Keywords: photoconductive antennas, gallium nitride, terahertz radiation, optical pumping, temporal shapes, pulsed terahertz spectroscopy.
  1. A. Krotkus. J. Phys. D, 43 (27), 273001 (2010). DOI: 10.1088/0022-3727/43/27/273001
  2. N.M. Burford, M.O. El-Shenawee. Opt.Engineer., 56 (1), 010901 (2017). DOI: 10.1117/1.OE.56.1.010901
  3. D. Pashnev, T. Kaplas, V.V. Korotyeyev, K.M. Borysenko, S.A. Vitusevich. Appl.Phys.Lett., 117 (5), 051105 (2020). DOI: 10.1063/5.0014977
  4. S.H. Yang, M.R. Hashemi, C.W. Berry, M. Jarrahi. IEEE Trans. Terahertz Sci. Technol., 4 (5), 575 (2014). DOI: 10.1109/TTHZ.2014.2342505
  5. D.H. Auston, K.P. Cheung, P.R. Smith. Appl.Phys.Lett., 45 (3), 284 (1984). DOI: 10.1063/1.95174
  6. D.H. Auston, K.P. Cheung, J.A. Valdmanis, D.A. Kleinman. Phys. Rev. Lett., 53 (16), 1555 (1984). DOI: 10.1103/PhysRevLett.53.1555
  7. O. Imafuji, B.P. Singh, Y. Hirose, Y. Fukushima, S. Takigawa. Appl. Phys. Lett., 91 (7), 071112 (2007). DOI: 10.1063/1.2771528
  8. D.H. Auston. Appl. Phys. Lett., 26 (3), 101 (1975). DOI: 10.1063/1.88079
  9. D.S. Ponomarev, R.A. Khabibullin, A.E. Yachmenev, A.Yu. Pavlov, D.N. Slapovskiy, I.A. Glinskiy, D.V. Lavrukhin, O.A. Ruban, P.P. Maltsev. Semiconductors, 51 (9), 1267 (2017). DOI: 10.21883/FTP.2017.09.44893.8508
  10. D.V. Lavrukhin, Yu.G. Goncharov, P.A. Khabibullin, K.I. Zaytsev, D.S. Ponomarev. Techn. Phys. Lett., 50 (8), 368 (2024). DOI: 10.61011/PJTF.2024.08.57513.19839
  11. D. Turan, N.T. Yardimci, P.K. Lu, M. Jarrahi. In: International Microwave Symposium (IEEE/MTT-S, 2020), p. 87. DOI: 10.1109/IMS30576.2020.9224081
  12. V. Adhikar, A. Karmakar, B. Biswas, C. Saha. In: Advances in Terahertz Technology and its Applications (Springer, Singapore, 2021), p. 1. DOI: 10.1007/978-981-16-5731-3_1
  13. N. Sharma, A. Kaur. In: World Conference on Applied Intelligence and Computing (IEEE, 2023), p. 491. DOI: 10.1109/AIC57670.2023.10263844
  14. Y. He, Y. Chen, L. Zhang, S. Wong, Z. Chen. China Commun., 17 (7), 124 (2020). DOI: 10.23919/J.CC.2020.07.011
  15. K. Demir, M. Unlu, H. Altan, A.B. Sahin, K. Elmabruk. J. Infrared, Millimeter, and Terahertz Waves, 40 (6), 228 (2019). DOI: 10.1007/s10762-019-00588-y
  16. Y. Shi, X. Zhang, Q. Qiu, Y. Gao, Z. Huang. IEEE Access, 9, 113823(2021). DOI: 10.1109/ACCESS.2021.3103205
  17. M.F. Ali, S. Sahu, R. Singh, G. Varshney. J. Opt., 26 (12), 125601(2024). DOI: 10.1088/2040-8986/ad8583
  18. M. Tani, K.S. Lee, X.C. Zhang. Appl.Phys.Lett., 77 (9), 1396 (2000). DOI: 10.1063/1.1289914
  19. A.M. Buryakov, M.S. Ivanov, S.A. Nomoev, D.I. Khusyainov, E.D. Mishina, V.A. Khomchenko. Mater. Res. Bull., 122, 110688(2020). DOI: 10.1016/j.materresbull.2019.110688
  20. E. Klimov, A. Klochkov, P. Solyankin, S. Pushkarev, G. Galiev, N. Yuzeeva, A. Shkurinov. Int. J. Mod. Phys. B, 38 (28), 2450378 (2024). DOI: 10.1142/S0217979224503788
  21. A. Takazato, M. Kamakura, T. Matsui, J. Kitagawa. Appl. Phys. Lett., 91 (1), 011102 (2007). DOI: 10.1063/1.2754370
  22. LND Rosa, K.J. Alaba, N.I. Cabello, R. Loberternos, J.P. Ferrolino, I.C. Verona, V.P. Juguilon. Opt. Mater., 150, 115212(2024). DOI: 10.1016/j.optmat.2024.115212
  23. R. Chen, X. Li, H. Du, J. Yan, C. Kong, G. Liu, G. Lu, X. Zhang, S. Song, X. Zhang, L. Liu. Nanomaterials, 14 (3), 294(2024). DOI: 10.3390/nano14030294
  24. RJB Dietz, H. Roehle, D. Stanze, V. Montanaro, H.J. Hensel, M. Schell, B. Sartorius. In: 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IEEE, 2010), p. 1 DOI: 10.1109/ICIMW.2010.5612633
  25. G. Xu, G. Sun, Y.J. Ding, I.B. Zotova, K.C. Mandal, A. Mertiri, G. Pabst, R. Roy, N.C. Fernelius. IEEE J. Selected Topics in Quant. Electron., 17, 30(2010). DOI: 10.1109/JSTQE.2010.2046628
  26. M.F. Saleem, G.A. Ashraf, M.F. Iqbal, R. Khan, M. Javid, T. Wang. Int. J. Opt., 2023 (1), 5619799(2023). DOI: 10.1155/2023/5619799
  27. A. Gauthier-Brun, J.H. Teng, E. Dogheche, W. Liu. Appl. Phys. Lett., 100 (7), 071913 (2012). DOI: 10.1063/1.3684836
  28. E.R. Burmistrov, L.P. Avakyants. ZhETF, 163 (5), 669 (2023) (in Russian). DOI: 10.31857/S0044451023050061
  29. A. Eljarrat, L. Lopez-Conesa, C. Magen, N. Garci a-Lepetit, vZ. Gavcevic, E. Calleja, F. Peiro. Phys. Chem. Chem. Phys., 18 (33), 23264(2016). DOI: 10.1039/C6CP04493J
  30. N. Armakavicius, V. Stanishev, S. Knight, P. Kuhne. Appl. Phys. Lett., 112 (8), 082103 (2018). DOI: 10.1063/1.5018247
  31. M. Tani, S. Matsuura, K. Sakai, S. Nakashima. Appl.Opt., 36 (30), 7853(1997). DOI: 10.1364/AO.36.007853
  32. N.M. Burford, M.O. El-Shenawee. Opt.Engineer., 56 (1), 010901 (2017). DOI: 10.1117/1.OE.56.1.010901

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