Physics of the Solid State
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Second harmonic recording of low stresses change in HgCdTe layers under the influence of local heating
Stupak M. F.1, Thebutler S. .A.2, Mikhailov N. N.2, Makarov S . A.1, Yelesin A . G.1
1Technological Design Institute of Scientific Instrument Engineering at the Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS), Novosibirsk, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: dvor@isp.nsc.ru

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The thermal effect of weak laser infrared radiation at a local point of the HgCdTe layer of the complex heterostructure (013)HgCdTe/CdTe/ZnTe/GaAs was studied with simultaneous measurement of the second harmonic signal using the null method "on reflection". The exposure power was 0.8 mW in a laser beam 400 μm in diameter during the irradiation time of 15 minutes. The splitting of the second harmonic signal in the maxima was observed with the appearance of two additional peaks. With an increase in exposure time to 15 minutes, the magnitude of the second harmonic signal at the initial maximum decreased to the magnitude of the measurement system noise, with the simultaneous increase of the height of additional peaks from 3000 to 6000 counts unit. After the end of the laser exposure, the second harmonic form is restored to original form with a decrease in their magnitude to 1700-2200 counts unit. The temperature at the point of exposure was measured using a thermal imager and was 24.0 oC at the beginning of the measurements, and 24.6 oC at the end of exposure. Keywords: stress, HgSdTe, second harmonic, laser, null method.
  1. S.A. Akhmanov, V.I. Yemelyanov, N.I. Voroteev, V.N. Seminogov. Sov. Phys. Usp, 28, 1084 (1985)
  2. A.A. Ionin, S.I. Kudryashov, A.A. Samokhin. Phys. Usp. 60, 2, 149 (2017)
  3. A.V. Dvurechenskiy L.V., G.A. Kachurin, N.V. Nidaev, L.S. Smirnov. Impul'snyj otzhig poluprovodnikovyh materialov. Nauka, Novosibirsk. (1982). 208 pp. (in Russian)
  4. Ya.V. Fattakhov, M.F. Galyautdinov, T.N. L'vova, I.B. Khaibullin. Quantum Electron. 30, 7, 597 (2000)
  5. A.B. Cheremisin, S.V. Loginova, P.P. Boriskov, A.A. Velichko, A.L. Parchment, V.V. Putrolainen. Pisma v ZhTF 37, 2, 22 (2011). (in Russian)
  6. L.N. Alexandrov. Kinetika kristallizacii i perekristallizacii poluprovodnikovyh plenok. Nauka, Novosibirsk. (1985). 224 pp. (in Russian)
  7. N. Bloembergen. Nonlinear Optics. 4th ed. World Scientific. Singapore. (1996). 188 c
  8. S.A. Akhmanov, M.F. Galyautdinov, N.I. Koroteev, G.A. Paityan, I.V. Khaibullin, E.I. Shtyrkov, I.L. Shumai. Pis'ma ZhTF, 10, 1900 (1984). (in Russian)
  9. D. Guidotti, T.A. Driscoll, H.J. Gerritsen. Sol. State Commun., 46, 337 (1983)
  10. T.A. Driscoll, D. Guidotti. Phys. Rev. Ser. B, 28, 1171 (1983)
  11. M.F. Stupak, N.N. Mikhailov, S.A. Dvoretskiy, S.N. Makarov, A.G. Elesin, A.G. Verkhoglyad. Technical Physics, 67, 14, 2290 (2022)
  12. M.F. Stupak, S.A. Dvoretsky, N.N. Mikhailov, S.N. Makarov, A.G. Elesin. J. Appl. Phys., 134, 185102 (2023)
  13. Yu.G. Sidorov, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, V.S. Varavin, A.P. Antsiferov. J. Opt. Technol. 67, 1, 31 (2000)
  14. M.F. Stupak, N.N. Mikhailov, S.A. Dvoretskiy, M.V. Yakushev. Optoelectron.Instrument.Proc., 55, 5, 447 (2019)
  15. M.F. Stupak, N.N. Mikhailov, S.A. Dvoretskiy, M.V. Yakushev, D.G. Ikusov, S.N. Makarov, A.G. Elesin, A.G. Verkhoglyad. Physics of the Solid State, 62, 2, 252 (2020)
  16. S.A. Dvoretskiy, M.F. Stupak, N.N. Mikhailov, S.N. Makarov, A.G. Elesin, A.G. Verkhoglyad. Semiconductors, 56, 8, 562 (2022)
  17. M.F. Stupak, S.A. Dvoretsky, N.N. Mikhailov, S.N. Makarov, A.G. Elesin. Optichesky zhurnal. 91, 2, 88 (2024). (in Russian)
  18. Yu.G. Sidorov, S.A. Dvoretskii, V.S. Varavin, N.N. Mikhailov, M.V. Yakushev, and I.V. Sabinina. Semiconductors, 35, 9, 1045 (2001)
  19. Sadao Adachi. Optical Constants of Crystalline and Amorphous Semiconductors. Springer Science+Business Media, N. Y. (1999). 286 p
  20. Y.G. Sidorov, M.V. Yakushev, V.S. Varavin, A.V. Kolesnikov, E.M. Trukhanov, I.V. Sabinina, I.D. Loshkarev. Physics of the Solid State, 57, 11, 2151 (2015)
  21. G. Brill, S. Farrel, Y.P. Chen, P.S. Wijewarnasuriya, N. Mulpury, V. Rao, J.D. Benson, N. Dhar. J. Electr. Mat, 39, 7, 967 (2010)

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