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Comparative crystal structure study of thin films of stoichiometric and non-stoichiometric titanium oxides
Markelova A. K.1, Kalmykov D. A.1, Voronkovskii V. A.
1, Aliev V. Sh.
1, Vdovin V. I.1, Gutakovskii A. K.1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: aliev@isp.nsc.ru, kalmykov@isp.nsc.ru, voronkovskii@isp.nsc.ru, vivdovin@isp.nsc.ru, gut@isp.nsc.ru
The crystal structure of thin films of stoichiometric TiO2 and non-stoichiometric TiO2-δ (δ=0.9) compositions, synthesized by ion beam sputtering deposition and annealed at temperatures of 723-973 K in argon atmosphere has been studied. It was found that the films of stoichiometric composition crystallize according to the dendritic growth mechanism at the initial stage. After the growth of dendrites before their interactions with each other, layered growth mechanism is observed with the formation of lamellar crystals. Films of non-stoichiometric composition crystallize according to the island growth mechanism. The activation energy of the crystallization front movement was determined for the dendritic growth mechanism, which was 2.3 eV. TiO2 films after annealing consisted of plate-shaped crystals of rutile phase with inclusions of anatase nanocrystals. The films of non-stoichiometric composition were nano-dispersed, containing crystalline phases: anatase, rutile, α-Ti3O5 and α-Ti. Keywords: thin films, titanium oxides, ion-beam sputtering-deposition, crystallization, HRTEM, SEM.
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