Physics of the Solid State
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GaN microrods growth by combined PA-MBE/HVPE method
Koryakin A. A.
1, Gridchin V. O.
1, Sharofidinov Sh. Sh.
2, Dvoretckaia L. N.
1, Shtrom I. V.
3, Serov A. Yu.
4, Kotlyar K. P.
1, Lendyashova V. V.
1, Mukhin I. S.
1, Cirlin G. E.
1,3
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
4St. Petersburg State University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
4St. Petersburg State University, St. Petersburg, Russia
Email: koryakinaa@spbau.ru
The growth of GaN microrods on silicon substrates by the combined PA-MBE/HVPE method was studied. At the first stage, selective-area growth of submicron-sized GaN rods is performed by molecular beam epitaxy with plasma nitrogen activation (PA-MBE). At the second stage, an array of GaN rods is overgrown by hydride vapor-phase epitaxy (HVPE) to increase their size. Controlled HVPE overgrowth of an array of GaN rods is demonstrated, leading to an increase in their average diameter from ~200 nm to ~500 nm and a decrease in the average aspect ratio from ~4 to ~2. The effect of epitaxial overgrowth on the morphological, optical and structural properties of GaN rods array was studied by scanning electron microscopy and low-temperature photoluminescence. Keywords: PA-MBE, HVPE, GaN microrods, epitaxial overgrowth.
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