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Magnetic properties of Insb films obtained by laser deposition
Russian version
Dmitriev A.I. 1, Parshina L.S.2, Dmitrieva M.S.1, Khramova O.D.2, Novodvorsky O.A.2
1Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Сhernogolovka, Russia
2National Research Center “Kurchatov Institute”, Moscow, Russia
Email: alex-dmitriev2005@yandex.ru, aid@icp.ac.ru
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The magnetic properties of InMnSb films obtained by pulsed laser deposition were studied. The temperature dependences of the magnetic moment of the films M(T) cooled in zero magnetic field (ZFC) and a magnetic field of 50 kOe (FC) were measured in different magnetic fields. Analysis of the obtained magnetic data showed that the films consist of two magnetic subsystems: the ferromagnetic subsystem of MnSb nanoinclusions and the paramagnetic subsystem of dispersed Mn2+ ions in the InSb matrix. Approximation of the M(T) dependence of the paramagnetic fraction by the Curie-Weiss function made it possible to estimate the concentration of dispersed Mn2+ impurity ions ni=(6.8±0.5)·1019 cm-3, which significantly exceeds the solubility limit of manganese impurity in bulk InSb crystals. As a result of analysis of the M(T) curve of the ferromagnetic phase of MnSb nanoinclusions within the framework of the Bloch 3/2 law, the saturation magnetization MS=225±24 emu/cm3 (1.1±0.1 μB/ion) and the Curie temperature TC=529±6 K of MnSb nanoinclusions were determined. The values of both quantities turned out to be significantly lower than in massive single-crystal samples. Analysis of FC-ZFC dependences measured in different fields allowed us to establish the dependence of the blocking temperature Tb of MnSb nanoinclusions on the external magnetic field strength H. Approximation of the Tb(H) dependence allowed us to estimate the field values Ha=812±265 Oe and the magnetic anisotropy constants K=(1.1± 0.3)·105 erg/cm3, which turned out to be close to the corresponding value determined earlier for MnxSb1-x single crystals of non-stoichiometric composition x=52.8%. Keywords: diluted magnetic semiconductors, InMnSb, pulsed laser deposition.
  1. T. Wojtowicza, W.L. Lim, X. Liu, G. Cywinski, M. Kutrowski, L.V. Titova, K. Yee, M. Dobrowolska, J.K. Furdyna, K.M. Yu, W. Walukiewicz, G.B. Kim, M. Cheon, X. Chen, S.M. Wang, H. Luo, I. Vurgaftman, J.R. Meyer. Physica E 20, 3-4, 325 (2004)
  2. S.A. Obukhov, B.S. Neganov, Y. Kiselev, A.N. Chernikov, V.S. Vekshina, N.I. Pepik, A.N. Popkov. Cryogenics 31, 10, 874 (1991)
  3. D.L. Partin, J. Heremans, C.M. Thrush. J. Crystal Growth 175-176, 2, 860 (1997)
  4. S. Yanagi, K. Kuga, T. Slupinski, H. Munekata. Physica E 20, 3-4, 333 (2004)
  5. J. Hollingswort, P.R. Bandaru. Mater. Sci. Eng. B 151, 2, 152 (2008)
  6. K. Ganesan, S. Mariyappan, H.L. Bhat. Solid State Commun. 143, 4-5, 272 (2007)
  7. K. Ganesan, H.L. Bhat. J. Appl. Phys. 103, 4, 043701 (2008)
  8. V.A. Ivanov, O.N. Pashkova, E.A. Ugolkova, V.P. Sanygin, R.M. Galera. Neorgan. materialy 44, 10, 1168 (2008). (in Russian)
  9. E.I. Yakovleva, L.N. Oveshnikov, A.V. Kochura, K.G. Lisunov, E. Lakhderanta, B.A. Aronzon. Pis'ma v ZhETF 101, 2, 136 (2015). (in Russian)
  10. N.D. Parashar, N. Rangaraju, V.K. Lazarov, S. Xie, B.W. Wessels. Phys. Rev. B 81, 11, 115321 (2010)
  11. A.V. Kochura, B.A. Aronzon, K.G. Lisunov, A.V. Lashkul, A.A. Sidorenko, R. De Renzi, S.F. Marenkin, M. Alam, A.P. Kuzmenko, E. Lahderanta. J. Appl. Phys. 113, 8, 083905 (2013)
  12. S.F. Marenkin, O.A. Novodvorsky, A.V. Shorokhova, A.B. Davydov, B.A. Aronzon, A.V. Kochura, I.V. Fedorchenko, O.D. Khramova, A.V. Timofeev. Neorgan. materialy 50, 9, 973 (2014). (in Russian)
  13. S.F. Marenkin, A.V. Kochura, I.V. Fedorchenko, A.D. Izotov, M.G. Vasiliev, V.M. Trukhan, E.V. Shelkova, O.A. Novodvorsky, A.L. Zheludkevich. Neorgan. materialy 52, 3, 309 (2016). (in Russian)
  14. L.S. Parshina, O.A. Novodvorsky, O.D. Khramova, I.A. Petukhov, A.A. Lotin, V.S. Mikhalevsky, A.V. Shorokhova. Comp. nanotechnol. 1, 62 (2014)
  15. A.I. Dmitriev, R.B. Morgunov, O.L. Kazakova, Y. Tanimoto. ZhETF 135, 6, 1134 (2009). (in Russian)
  16. T. Okita and Y. Makino. J. Phys. Soc. Jpn., 25, 1, 120 (1968)
  17. R. Coehoorn, C. Haas, R.A. de Groot. Phys. Rev. B 31, 4, 1980 (1985)
  18. H. Zhang, S.S. Kushvaha, S. Chen, X. Gao, D. Qi, A.T.S. Wee, X.-S. Wang. Appl. Phys. Lett. 90, 20, 202503 (2007)
  19. B.L. Low, C.K. Ong, J. Lin, A.C.H. Huan, H. Gong, T.Y.F. Liew. J. Appl. Phys. 85, 10, 7340 (1999)
  20. K. Lawniczak-Jablonska, A. Wolska, J. Bak-Misiuk, E. Dynowska, P. Romanowski, J.Z. Domagala, R. Minikayev, D. Wasik, M.T. Klepka, J. Sadowski, A. Barcz, P. Dluzewski, S. Kret, A. Twardowski, M. Kaminska, A. Persson, D. Arvanitis, E. Holub-Krappe, A. Kwiatkowski. J. Appl. Phys. 106, 8, 083524 (2009)
  21. S.P. Gubin, Yu.A. Koksharov, G.B. Khomutov, G.Yu. Yurkov. Uspekhi khimii 74, 6, 539 (2005). (in Russian)
  22. Y.D. Zhang, J.I. Budnick, W.A. Hines, C.L. Chien, J.Q. Xiao. Appl. Phys. Lett. 72, 16, 2053 (1998)
  23. M. Knobel, W.C. Nunes, H. Winnischofer, T.C.R. Rocha, L.M. Socolovsky, C.L. Mayorga, D.Zanchet. J. Non-Cryst. Solids 353, 8-10, 743 (2007).
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