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Resistive and dielectric response in hafnium diselenide intercalated with copper atoms, under excitation by an alternating electric field
Russian version
Pleshchev V. G. 1
1Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, Russia
Email: v.g.pleshchev@urfu.ru
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A joint study of relaxation processes during charge transfer and polarisation change under dynamic excitation has been carried out by impedance spectroscopy in intercalated CuxHfSe2 samples. The maximum values of the imaginary component of the impedance allowed us to determine the relaxation times in the system of mobile charge carriers. A significant frequency dispersion of the real and imaginary components of the dielectric permittivity was found in the used samples. Using the dielectric modulus formalism, dielectric relaxation times decreasing in magnitude with increasing copper content in the samples and with increasing temperature have been determined. It is shown that the dielectric relaxation times appear to be smaller than the relaxation times for charge transfer determined from the frequency dependences of the imaginary part of the complex impedance. Keywords: hafnium diselenide, copper, impedance, dielectric permittivity, dielectric modulus, relaxation times.
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