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Influence of the ZnO buffer layer on the magnetic properties of the BiFeO3 thin film on sapphire
Russian version
Kallaev S. N.1, Sadykov S. A.2, Alikhanov N. M.1,2, Jamaludinov M. R.1, Pavlenko A. V.3, Omarov Z. M.1
1Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, Makhachkala, Russia
2Dagestan State University, Makhachkala, Dagestan Republic, Russia
3Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
Email: kallaev-s@rambler.ru, alihanov.nariman@mail.ru, omarov_zairbek@mail.ru
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Thin layers of bismuth ferrite on an Al2O3 (C-plane) sapphire substrate with a ZnO zinc oxide buffer layer were synthesized by gas-discharge high-frequency cathode sputtering of a ceramic target of stoichiometric composition BiFeO3 in an oxygen atmosphere. The structure, magnetic and optical properties of the BiFeO3/ZnO/Al2O3 film are investigated. X-ray diffraction measurements and Raman spectra of the deposited films confirm the formation of a crystalline phase of thin layers of BiFeO3 and ZnO. Based on the results of optical studies, the band gap for the direct transition is 2.51 eV. Magnetic hysteresis loops (M-H) of a thin BiFeO3 film with a ZnO buffer layer exhibit the behavior characteristic of ferromagnets. It is shown that the magnetization of BiFeO3 is significantly higher (almost five times) in a BiFeO3/ZnO/Al2O3 film compared to a film without a buffer layer, which indicates the important role of the ZnO buffer layer in improving the magnetic properties of bismuth ferrite for practical applications. Keywords: multiferroics, BiFeO3, ZnO, thin films, magnetic properties.
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