Physics of the Solid State
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Dielectric spectroscopy of AgI films doped Cu
Ilyinsky А. М.1, Castro R. A.2, Klimov V. A.1, Kononov A. A.2, Popova I. O.2, Shadrin E. B.1
1Ioffe Institute, St. Petersburg, Russia
2Herzen State Pedagogical University of Russia, St. Petersburg, Russia
Email: timof-ira@yandex.ru

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It has been found that the doping of AgI films with Cu atoms significantly reduces the concentration of equilibrium electrons. It turns out to be so small that the array of free electrons in the conduction band of the nanocrystallites of the film is not able to completely shield the external probing electric field applied to the sample in the method of dielectric spectroscopy. It is shown that this circumstance opens up the possibility of a clear observation in the study of dielectric spectra of AgI:Cu drift of free electrons, free holes, and massive silver ions. The parameters of the thermal hysteresis loop of the frequency position of the maximum function of the frequency dependence of dielectric losses [ε''(F)], recorded in the semiconductor-superionics OP region, are determined. The Maxwellian relaxation times for electrons, holes, and a system of "molten" silver ions are also determined. Keywords: dielectric spectra, superionics, silver iodide, AgI films, semiconductor-superionic phase transition.
  1. A.A. Kononov, A.V. Ilinsky, R.A. Kastro, V.A. Klimov, M.E. Pashkevich, I.O. Popova, E.B. Shadrin, FTP, 2023, 57, 8, 624 (2023). (in Russian)
  2. A.V. Ilinskiy, E.B. Shadrin, R.A. Castro, I.O. Popova, Phys. Complex Systems, 3, 4, 202 (2023)
  3. T.Yu. Vergentyev, E.Yu. Koroleva, D.A. Kurdyukov, A.A. Naberezhnov, A.V. Filimonov. FTT 55, 1, 157 (2013). (in Russian)
  4. N.N. Bikkulova, Yu.M. Stepanov, L.V. Bikkulova, A.R. Kurbangulov, A.Kh. Kutov, R.F. Karagulov. Kristallografiya, 58, 4, 603 (2013). (in Russian)
  5. A.V. Ilinsky, R.A. Kastro, M.E. Pashkevich, I.O. Popova, E.B. Shadrin. FTT 62, 12, 2138 (2020). (in Russian)
  6. A.A. Kononov, R.A. Castro, Y. Saito, P. Fons, G.A. Bordovsky, N.I. Anisimova, A.V. Kolobov. J. Mater. Sci. Mater. Electron., 32, 10, 14072 (2021)

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