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Magnesium diffusion in silicon grown by the Czochralskii method
Russian version
PortselL. M.1, Astrov Yu. A.1, А.N. Lodygin A. N.1
1Ioffe Institute, St. Petersburg, Russia
Email: leonid.portsel@mail.ioffe.ru
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Magnesium diffusion in dislocation-free Czochralski silicon (CzSi) with oxygen concentration ~(1.2-1.6)·1017 cm-3 was studied. The temperature dependence of the magnesium diffusion coefficient was compared with the data obtained earlier in Cz-Si with a higher oxygen concentration ~(3-4)·1017 cm-3. Diffusion coefficient values measured at temperatures T=1100-1250oC were found to be larger in silicon with lower oxygen concentration. The experimental data were processed in the frame of the trap-limited diffusion model, in which diffusion retardation occurs as a result of trapping of interstitial Mg atoms by oxygen-related centers. The trap binding energy was determined to be ~2.2 eV. Keywords: Czochralskii silicon, magnesium, diffusion, deep donors.
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