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Temperature dependence of the spin current in iridate/manganite heterostructures
Russian version
Ul'ev G. D.1,2, Constantinian K. Y.1, Ovsyannikov G. A.1, Moscal I. E.1, Shadrin A. V.1,3
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2National Research University Higher School of Economics, Moscow, Russia
3Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
Email: gdulev@edu.hse.ru
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The results of an experimental study of the temperature dependences of spin-dependent resistive characteristics of the iridate/manganite heterostructure (SrIrO3/La0.7Sr0.3MnO3), taken in the configuration of the planar Hall effect, as well as the amplitude of the spin current arising under the action of microwave exposure in ferromagnetic resonance conditions, are presented. The spin Hall angle was determined from the angular dependences of the transverse and longitudinal spin magnetoresistance of the heterostructure. The effect of shunting by anisotropic magnetoresistance of a magnetic film in a heterostructure is discussed. For comparison, the data obtained on the manganite film are presented. Keywords: Spin current, spin-orbital interaction, thin films, heterostructure, magnetoresistance, strontium iridate, manganite.
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