Physics of the Solid State
Volumes and Issues
Home » Physics of the Solid State » Year 2024, issue 4 » Article p. 538
<<<>>>
Magnetoresistance oscillations in films of multicomponent topological insulators based on bismuth telluride
Russian version
Lukyanova L. N. 1, Usov O. A. 1, Volkov M. P. 1
1Ioffe Institute, St. Petersburg, Russia
Email: lidia.lukyanova@mail.ioffe.ru, oleg.usov@mail.ioffe.ru, m.volkov@mail.ioffe.ru
PDF
In layered films of n-(Bi, Sb, In)2(Te, Se)3 solid solutions, which are 3D topological insulators, quantum oscillations and temperature dependences of magnetoresistivity have been investigated in strong magnetic fields up to 14 T. Using the Lifshitz-Kosevich theory, the parameters of the surface states of Dirac fermions have been calculated, revealing that the studied films are characterized by two cyclotron resonance frequencies. It is demonstrated that the surface concentration of Dirac fermions increases in films with a high thermoelectric power factor when substituting atoms in the Bi sublattice with In, compared to Sb -> Bi substitutions. The Landau level indices and Berry phase have been calculated. It is demonstrated that with an increase in the cyclotron resonance frequency in the film n-Bi1.92In0.02Te2.88Se0.12, Landau levels are observed at higher magnetic fields compared to n-Bi1.6Sb0.4Te2.91Se0.09. In the n-Bi1.6Sb0.4Te2.91Se0.09 films, temperature dependencies of resistivity in the magnetic field B=14 T exhibit plateaus at low temperatures, characteristic of topological insulators. At temperatures below 15 K, a non-linear dependence of resistivity on magnetic field is observed due to quantum interference effects associated with weak anti-localization of Dirac fermions. Keywords: thermoelectrics, layered films, quantum oscillations, strong magnetic fields, surface states.
  1. M.Z. Hasan, C.L. Kane. Rev. Mod. Phys. 82, 4, 3045 (2010)
  2. J.P. Heremans, R.J. Cava, N. Samarth. Nature Rev. Mater. 2, 10, 17049 (2017)
  3. P. Ngabonziza. Nanotechnol. 33, 19, 192001 (2022)
  4. M.J. Gilbert. Commun. Phys. 4, 1, 70 (2021)
  5. G. Jiang, J. Yi, L. Miao, P. Tang, H. Huang, C. Zhao, S. Wen. Sci. Rep. 8, 1, 2355 (2018)
  6. L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, W. Zhang. Laser. Photon. Rev. 14, 4, 1900409 (2020)
  7. H. Liu, P.D. Ye. Appl. Phys. Lett. 99, 5, 052108 (2011)
  8. H. Steinberg, D.R. Gardner, Y.S. Lee, P. Jarillo-Herrero. Nano Lett. 10, 12, 5032 (2010)
  9. J. Zhu, T. Zhang, Y. Yang, R. Huang. Appl. Phys. Rev. 7, 1, 011312 (2020)
  10. Y. Chen. Surface excitonic thermoelectric devices. US Patent Application ID US20120138115A1 (2012)
  11. M. Eschbach, E. Mynczak, J. Kellner, J. Kampmeier, M. Lanius, E. Neumann, C. Weyrich, M. Gehlmann, P. Gospodarivc, S. Doring, G. Mussler, N. Demarina, M. Luysberg, G. Bihlmayer, T. Schapers, L. Plucinski, S. Blugel, M. Morgenstern, C.M. Schneider, D. Grutzmacher. Nature Commun. 6, 1, 8816 (2015)
  12. I.V. Korobeinikov, N.V. Morozova, L.N. Lukyanova, O.A. Usov, V.A. Kulbachinskii, V.V. Shchennikov, S.V. Ovsyannikov. J. Phys. D 51, 2, 025501 (2018)
  13. I.V. Korobeinikov, N.V. Morozova, L.N. Lukyanova, O.A. Usov, S.V. Ovsyannikov. Semiconductors 53, 6, 732 (2019)
  14. N.V. Morozova, I.V. Korobeinikov, S.V. Ovsyannikov. J. Appl. Phys. 125, 22, 220901 (2019)
  15. H. Liu, S. Liu, Y. Yi, H. He, J. Wang. 2D Mater. 2, 4, 045002 (2015)
  16. L. Bao, L. He, N. Meyer, X. Kou, P. Zhang, Z. Chen, A.V. Fedorov, J. Zou, T.M. Riedemann, T.A. Lograsso, K.L. Wang, G. Tuttle, F. Xiu. Sci. Rep. 2, 1, 726 (2012)
  17. S.Y. Matsushita, K. Ichimura, K.K. Huynh, K. Tanigaki. Phys. Rev. Mater. 5, 1, 014205 (2021)
  18. I.M. Lifshitz, A.M. Kosevich. Sov. Phys. --- JETP 2, 4, 636 (1956)
  19. D. Shoenberg. Magnetic oscillations in metals. Ser. Monographs on physics. Cambridge University Press, Cambridge (2009)
  20. Y. Ando. J. Phys. Soc. Jpn. 82, 10, 102001 (2013)
  21. L.N. Lukyanova, O.A. Usov, M.P. Volkov. Semiconductors 53, 5, 620 (2019)
  22. L.N. Lukyanova, I.V. Makarenko, O.A. Usov. Semiconductors 56, 5, 317 (2022)
  23. L.N. Lukyanova, I.V. Makarenko, O.A. Usov. J. Phys.: Condens. Matter 32, 46, 465701 (2020)
  24. N.H. Tu, Y. Tanabe, Y. Satake, K.K. Huynh, P.H. Le, S.Y. Matsushita, K. Tanigaki. Nano Lett. 17, 4, 2354 (2017)
  25. S.-M. Huang, Y.-J. Yan, S.-H. Yu, M. Chou. Sci. Rep. 7, 1, 1896 (2017)
  26. S.K. Kushwaha, I. Pletikosic, T. Liang, A. Gyenis, S.H. Lapidus, Y. Tian, H. Zhao, K.S. Burch, J. Lin, W. Wang, H. Ji, A.V. Fedorov, A. Yazdani, N.P. Ong, T. Valla, R.J. Cava. Nature Commun. 7, 1, 11456 (2016)
  27. R. Dey, T. Pramanik, A. Roy, A. Rai, S. Guchhait, S. Sonde, H.C.P. Movva, L. Colombo, L.F. Register, S.K. Banerjee. Appl. Phys. Lett. 104, 22, 223111 (2014)
  28. A.R. Wright, R.H. McKenzie. Phys. Rev. B 87, 8, 085411 (2013)
  29. F.F. Tafti, Q.D. Gibson, S.K. Kushwaha, N. Haldolaarachchige, R.J. Cava. Nature Phys. 12, 3, 272 (2016)
  30. L.N. Lukyanova, Yu.A. Boikov, O.A. Usov, V.A. Danilov, M.P. Volkov. Semiconductors 51, 7, 843 (2017)
  31. H.-Z. Lu, S.-Q. Shen. Chinese Phys. B 25, 11, 117202 (2016)
  32. H.-T. He, G. Wang, T. Zhang, I.-K. Sou, G.K.L. Wong, J.-N. Wang, H.-Z. Lu, S.-Q. Shen, F.-C. Zhang. Phys. Rev. Lett. 106, 16, 166805 (2011)
  33. H. Peng, K. Lai, D. Kong, S. Meister, Y. Chen, X.-L. Qi, S.-C. Zhang, Z.-X. Shen, Y. Cui. Nature Mater. 9, 3, 225 (2010)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru