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Unusual defects in CVD diamond
Russian version
Martyushov S. Yu. 1, Shul'pina I. L. 2, Lomov A. A. 3, Polyakov S. N. 1
1Technological Institute for Superhard and Novel Carbon Materials, Moscow, Russia
2Ioffe Institute, St. Petersburg, Russia
3Valiev Institute of Physics and Technology of RAS, Moscow, Russia
Email: mart@tisnum.ru
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Structural defects of a diamond grown homoepitaxially by chemical vapor deposition (CVD) on a single-crystal substrate of a Ib diamond obtained by the high-pressure high-temperature method (HPHT) were studied using the methods of X-ray diffraction imaging (projection and section X-ray topography) and high-resolution (double-crystal) X-ray diffractometry. It is shown that there are no HPHT substrate defects in CVD diamond, but new ones are present - stacking faults of an unusual type and structure, which coexist with highly perfect crystal regions suitable for manufacturing elements of X-ray optics. For the first time, macrodefects were discovered, which were previously observed only in dislocation-free silicon single crystals. Keywords: HPHT diamond, synthetic diamond, structural defects, dislocations, stacking faults, X-ray diffraction imaging, section and projection topography, high-resolution X-ray diffractometry.
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