Volumes and Issues
Home » Optics and Spectroscopy » Year 2023, issue 8 » Article p. 1055
<<<>>>
The Effect Of Surface Passivation Of GaAs-based Cylindrical Mesa Structures On Their Optical Properties
Russian version
Melnichenko I. A. 1,2, Kryzhanovskaya N. V. 1, Ivanov K. A. 1, Nadtochiy A. M. 1,3, Makhov I. S. 1, Kozodaev M. G. 4, Khakimov R. R.4, Markeev A. M. 4, Vorobyev A. A.2, Mozharov A. M.2, Guseva Yu. A. 3, Likhachev A. I. 3, Kolodezny E. S. 5, Zhukov A. E. 1
1HSE University, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Moscow Institute of Physics and Technology (National Research University), Dolgoprudniy, Moscow Region, Russia
5ITMO University, St. Petersburg, Russia
PDF
The optical properties of GaAs-based cylindrical mesa-structures were studied before and after passivation using hydrogen plasma treatment followed by atomic layer deposition of an Al2O3 layer. The In0.2Ga0.8As/GaAs quantum well and the GaAs/AlAs superlattice were used as the light-emitting region of the mesa structures. The diameter of the mesas varied from 3 to 20 μm. The result of passivation was an 8-fold increase in the photoluminescence intensity of 9 μm-diameter mesa at room temperature, and time-resolved photoluminescence studies of such mesa structures demonstrated an increase in charge carrier lifetime from 0.13 to 0.9 ns. Keywords: InGaAs, quantum well, surface passivation, atomic layer deposition.
  1. P. Laukkanen, M.P.J. Punkkinen, M. Kuzmin, K. Kokko, J. Lang, R.M. Wallace. Appl. Phys. Rev., 8 (1), 011309 (2021). DOI: 10.1063/1.5126629
  2. H. Deng, G.L. Lippi, J. M rk, J. Wiersig, S. Reitzenstein. Adv. Optical Mater., 9 (19), 2100415 (2021). DOI: 10.1002/adom.202100415
  3. S.H. Pan, S.S. Deka, A.El Amili, Q. Gu, Y. Fainman. Progress in Quantum Electronics, 59, 1-18 (2018). DOI: 10.1016/j.pquantelec.2018.05.001
  4. R.T. Ley, J.M. Smith, M.S. Wong, T. Margalith, S. Nakamura, S.P. DenBaars, M.J. Gordon. Appl. Phys. Lett., 116 (25), 251104 (2020). DOI: 10.1063/5.0011651
  5. A. Baca, C. Ashby. Fabrication of GaAs Devices (The Institution of Engineering and Technology, London, 2005). DOI: 10.1049/PBEP006E
  6. M. Boroditsky, I. Gontijo, M. Jackson, R. Vrijen, E. Yablonovitch, T. Krauss, Chuan-Cheng Cheng, A. Scherer, R. Bhat, M. Krames. J. of Appl. Phys., 87 (7), 3497-3504 (2000). DOI: 10.1063/1.372372
  7. T.S. Shamirzaev, K.S. Zhuravlev, A.Yu. Kobitski, H.P. Wagner, D.R.T. Zahn. Phys. B: Condensed Matt., 308, 761-764 (2001). DOI: 10.1016/S0921-4526(01)00831-6
  8. L. Zhou, B. Bo, X. Yan, C. Wang, Y. Chi, X. Yang. Crystals, 8 (5), 226 (2018). DOI: 10.3390/cryst8050226
  9. J. Robertson, Y. Guo, L. Lin. J. Appl. Phys., 117 (11), 112806 (2015). DOI: 10.1063/1.4913832
  10. S. Arab, C. Chi, T. Shi, Y. Wang, D.P. Dapkus, H.E. Jackson, L.M. Smith, S.B. Cronin. ACS Nano, 9 (2), 1336-1340 (2015). DOI: 10.1021/nn505227q
  11. S.R. Lunt, G.N. Ryba, P.G. Santangelo, N.S. Lewis. J. Appl. Physics, 70 (12), 7449-7467 (1991). DOI: 10.1063/1.349741
  12. C.I.H. Ashby, K.R. Zavadil, A.J. Howard, B.E. Hammons. Appl. Phys. Lett., 64 (18), 2388-2390 (1994). DOI: 10.1063/1.111623
  13. M. Oshima, T. Scimeca, Y. Watanabe, H. Oigawa, Y. Nannichi. Japanese J. Appl. Physics, 32 (1S), 517 (1993). DOI: 10.1143/JJAP.32.518
  14. A. Aierken, J. Riikonen, J. Sormunen, M. Sopanen, H. Lipsanen. Appl. Phys. Lett., 88 (22), 221112 (2006). DOI: 10.1063/1.2208557
  15. J. Schmid, A. Merkle, B. Hoex, M.C.M. Van De Sanden, W.M.M. Kessels, R. Brendel. In: 2008 33rd IEEE Photovoltaic Specialists Conference (IEEE, 2008), p. 1-5. DOI: 10.1109/PVSC.2008.4922636
  16. A. Paccagnella, A. Callegari, E. Latta, M. Gasser. Appl. Phys. Lett., 55 (3), 259-261 (1989). DOI: 10.1063/1.101922
  17. E. Yoon, R.A. Gottscho, V.M. Donnelly, H.S. Luftman. Appl. Phys. Lett., 60 (21), 2681-2683 (1992). DOI: 10.1063/1.106894
  18. L.E. Black, A. Cavalli, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers, W.M.M. Kessels. Nano Letters, 17 (10), 6287-6294 (2017). DOI: 10.1021/acs.nanolett.7b02972
  19. Z.L. Wang, Z.B. Hao, J.D. Yu, C. Wu, L. Wang, J. Wang, C.Z. Sun, B. Xiong, Y.J. Han, H.T. Li, Y. Luo. J. Phys. Chem. C, 121 (11), 6380-6385 (2017). DOI: 10.1021/acs.jpcc.7b00578

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru