Physics of the Solid State
Determination of solubility of cobalt in singlecrystal silicon method neutron activation
Tashmetov M. Yu.1, Makhkamov Sh .1, Tillaev T. S.1, Erdonov M. N.1, Kholmedov H. M.2
1Institute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
2Tashkent University of Information Technologies, Tashkent, Uzbekistan
2Tashkent University of Information Technologies, Tashkent, Uzbekistan
Email: makhkamov@inp.uz, muzaffarerdonov1978@yandex.ru, erdonov@inp.uz
The possibility of instrumental neutron activation analysis is revealed for determining the solubility of cobalt in single-crystal silicon. It was shown that in n-Si in the diffusion temperature range of 1000-1250oC the total solubility of the 60Co impurity varies within the concentration range of 2.8·1014-9·1015 cm-3, and the electrically active concentration grows from 1013 to 3·1014 cm-3. In order to reduce the error in determining the concentration of 1013 in doped Si samples, it is suggested to use the parent stable isotope rather than the daughter cobalt radionuclide. Keywords: monocrystalline silicon, cobalt impurity, diffusion, neutron activation analysis, solubility, irradiation, radionuclide, concentration.
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