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Creation of optically addressable spin centers in hexagonal boron nitride by proton irradiation
Russian version
DOI: 10.21883/PSS.2022.08.54624.349
Murzakhanov F. F.1, Mumdzhi I. E.1, Mamin G. V.1, Yusupov R. V.1, Davydov V. Yu. 2, Smirnov A. N. 2, Muzafarova M. V. 2, Nagalyuk S. S. 2, Soltamov V. A. 1
1Institute of Physics, Kazan Federal University, Kazan, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: murzakhanov.fadis@yandex.ru, IEMumdzhi@kpfu.ru, georgemamin@gmail.com, Roman.Yusupov@kpfu.ru, Valery.Davydov@mail.ioffe.ru, Alex.Smirnov@mail.ioffe.ru, marina.muzafarova@mail.ioffe.ru, snagalyuk@gmail.com, victor_soltamov@mail.ru
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The possibility of creating defects with spin-dependent fluorescence in a Van der Waals material, hexagonal boron nitride (hBN), by irradiating the latter with high-energy protons (EP=15 MeV) has been studied. Using micro-photoluminescence and electron paramagnetic resonance methods it was shown that such irradiation leads to the creation of boron vacancies in the negative charge state (V-B-centers). The ground spin triplet (S=1) state of these defects demonstrates an optically induced inverse population. Keywords: electron paramagnetic resonance, micro-photoluminescence, hexagonal boron nitride, boron vacancy.
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