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Percolation effect impact on resistive switching of structures based on nanocomposite (Co40Fe40B20)x(LiNbO3)100-x
Russian version
DOI: 10.21883/PSS.2022.11.54188.410
Nikiruy K.E.1, Emelyanov A.V. 1,2, Matsukatova A.N. 1, Kukueva E.V.1, Vasiliev A.L.1, Sitnikov A.V.1,3, Demin V.A.1, Rylkov V.V. 1,4
1National Research Center “Kurchatov Institute”, Moscow, Russia
2Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudnyi, Russia
3Voronezh State Technical University, Voronezh, Russia
4Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
Email: emelyanov.andrey@mail.ru, an.matcukatova@physics.msu.ru, vvrylkov@mail.ru
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Comparative studies of resistive switching (RS) effect of metal/nanocomposite/metal (M/NC/M), metal/nanocomposite/LiNbO3/metal (M/NC/LNO/M) structures based on NC (Co40Fe40B20)x(LiNbO3)100-x (x=6-20 at.%) with CoFe nanogranules 2-4 nm in size, as well as structures without a NC layer (M/LNO/M), have been carried out. It was found that the percolation conductivity in NC and presence of a thin LNO layer play a key role in the RS effect. When the metal content approaches the percolation threshold of M/NC/M structures (xp~10 at.%), low-resistance percolation nanochannels of granules are formed in structures with an embedded LNO layer, which ensure their stable RS, which, however, are noticeably suppressed as x decreases relative to xp by Delta x~1-2 at.%. Keywords: resistive switching, memristor, nanocomposite, percolation.
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