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Recombination in gapless HgTe/CdHgTe quantum well heterostructure
Aleshkin V. Ya.1, Dubinov A. A.1, Gavrilenko V. I.1, Pavlov S. G.2, H.-W.Hübers H. -W.2,3
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Institute of Optical Sensor Systems, German Aerospace Center (DLR), Berlin, Germany
3Institut für Physik, Humboldt-Universität zu Berlin, Berlin, Germany
Email: aleshkin@ipmras.ru

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Three recombination mechanisms of nonequilibrium carriers in gapless undoped quantum well in HgTe/CdHgTe heterostructure are considered. Dependencies of ensemble-average probability of recombination (inverse of recombination time) on concentration of nonequilibrium carriers for recombination with emission of optical phonons, recombination with emission of two-dimensional plasmons, and radiative recombination have been calculated. Key words: gapless HgTe quantum well, recombination mechanisms of nonequilibrium carriers.
  1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, I.V. Grigorieva, S.V. Dubonos, A.A. Firsov. Nature, 438, 197 (2005)
  2. D. Yadav, G. Tamamushi, T. Watanabe, J. Mitsushio, Y. Tobah, K. Sugawara, A.A. Dubinov, A. Satou, M. Ryzhii, V. Ryzhii, T. Otsuji. Nanophotonics 7, 741 (2018)
  3. S. Boubanga-Tombet, W. Knap, D. Yadav, A. Satou, D.B. But, V.V. Popov, I.V. Gorbenko, V. Kachorovskii, T. Otsuji. Phys. Rev. X, 10, 031004 (2020)
  4. L. Vicarelli, M.S. Vitiello, D. Coquillat, A. Lombardo, A.C. Ferrari, W. Knap, M. Polini, V. Pellegrini, A. Tredicucci. Nature Mater. 11, 865 (2012)
  5. X. Cai, A.B. Sushkov, R.J. Suess, M. M. Jadidi, G.S. Jenkins, L.O. Nyakiti, R.L. Myers-Ward, S. Li, J. Yan, D.K. Gaskill, T.E. Murphy, H.D. Drew, M. S. Fuhrer. Nature Nanotechnology 9, 814 (2014)
  6. D.A. Bandurin, D. Svintsov, I. Gayduchenko, S.G. Xu, A. Principi, M. Moskotin, I. Tretyakov, D. Yagodkin, S. Zhukov, T. Taniguchi, K. Watanabe, I.V. Grigorieva, M. Polini, G.N. Goltsman, A.K. Geim G. Fedorov. Nature Commun. 9, 5392 (2018)
  7. B. Buttner, C.X. Liu, G. Tkachov, E.G. Novik, C. Brune, H. Buhmann, E.M. Hankiewicz, P. Recher, B. Trauzettel, S.C. Zhang, L.W. Molenkamp. Nature Phys. 7, 418 (2011)
  8. S. Dvoretsky, N. Mikhailov, Yu. Sidorov, V. Shvets, S. Danilov, B. Wittman. J. Electron. Mater. 39, 918 (2010)
  9. P. Huang, E. Riccardi, S. Messelot, H. Graef, F. Valmorra, J. Tignon, T. Taniguchi, K. Watanabe, S. Dhillon, B. Placais, R. Ferreira, J. Mangeney. Nature Commun. 11, 863 (2020)
  10. F. Rana. Phys. Rev. B 76, 155431 (2007)
  11. F. Rana, P.A. George, J.H. Strait, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, M.G. Spencer. Phys. Rev. B 79, 115447 (2009)
  12. F. Rana, J.H. Strait, H. Wang, C. Manolatou. Phys. Rev. B, 84, 045437 (2011)
  13. G. Alymov, V. Vyurkov, V. Ryzhii, A. Satou, D. Svintsov. Phys. Rev. B, 97, 205411 (2018)
  14. M.S. Zholudev, A.V. Ikonnikov, F. Teppe, M. Orlita, K.V. Maremyanin, K.E. Spirin, V.I. Gavrilenko, W. Knap, S.A. Dvoretskiy, N.N. Mihailov. Nanoscale Res. Lett. 7, 534 (2012)
  15. S.A. Tarasenko, M.V. Durnev, M.O. Nestoklon, E.L. Ivchenko, J.-W. Luo, A. Zunger. Phys. Rev. B 91, 081302(R) (2015)
  16. K. Huang, B. Zhu. Phys. Rev. B 38, 13377 (1988)
  17. V.Ya. Aleshkin, G. Alymov, A.A. Dubinov, V.I. Gavrilenko, F. Teppe. J. Phys. Commun. 4, 115012 (2020)
  18. P. Yu, M. Kardona, Fundamentals of semiconductor physics, Fizmatlit, M, (2002) (in Russian)
  19. V.Ya. Aleshkin, A.A. Dubinov, V.I. Gavrilenko, F. Teppe. J. Opt., 23, 115001 (2021)
  20. N.L. Bazhenov, K.D. Mynbayev, G.G. Zegrya, Physics and Technique of Semiconductors, 49, 1206 (2015) (in Russian)
  21. V.Ya. Aleshkin, A.A. Dubinov, V.V. Rumyantsev, M.A. Fadeev, O.L. Domnina, N.N. Mikhailov, S.A. Dvoretsky, F. Teppe, V.I. Gavrilenko, S.V. Morozov. J. Phys.: Condens. Matter 30, 495301 (2018).

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