Registration of the time dependence of the number of emission sites as a tool for analyzing field cathodes current fluctuations
Kolosko A.G.1, Filippov S.V.1, Popov E.O.1
1Ioffe Institute, St. Petersburg, Russia
Email: agkolosko@mail.ru, f_s_v@list.ru, e.popov@mail.ioffe.ru

PDF
A new tool for obtaining the frequency characteristics of the interaction of emission sites with adsorbates was developed. The technique is based on the use of a computerized field projector with online processing of patterns of the distribution of emission sites over the cathode surface. The resulting dependences reflect the frequency of fluctuations in the activity of individual sites. The influence of the choice of the threshold brightness parameter, the proximity of the sites to each other and the stability of the total emission current on the shape of these curves is considered. The coincidence of the shapes of curves constructed by various methods (in online mode, in post-processing mode and in the mode of random processes modeling) is analyzed. Keywords: field emission, emission current fluctuations, carbon nanotubes, registration of emission sites, adsorption processes on the surface.
  1. A.V. Eletskii. Phys.-Usp. 53, 9, 863 (2010)
  2. A. Pandey, A. Prasad, J.P. Moscatello, M. Engelhard, C. Wang, Y.K. Yap. ACS Nano 7, 1, 117 (2013)
  3. O. Mohsen, A. Lueangaramwong, S. Valluri, R. Divan, V. Korampally, A. Sumant, P. Piot. 10th Int. Particle Accelerator Conf. (IPAC'19), Melbourne, Australia, 2117 (2019)
  4. K.U. Laszczyk, M. Krysztof, J.A. Dziuban, A. Gorecka-Drzazga. 31st Int. Vacuum Nanoelectron. Conf. (IVNC) IEEE, 1 (2018)
  5. M.M. Kopelvski, E. Galeazzo, H.E. Peres, F.J. Ramirez-Fernandez, D.A. Silva, M.O. Dantas. Measurement 93, 208 (2016)
  6. L. Nilsson, O. Groening, P. Groening, O. Kuettel, L. Schlapbach. J. Appl. Phys. 90, 2, 768 (2001)
  7. J.D. Jarvis, H.L. Andrews, C.A. Brau, B.K. Choi, J. Davidson, W.-P. Kang, C.L. Stewart, Y.-M. Wong. Proceed. FEL2009, 372, Liverpool, UK (2009). https://accelconf.web.cern.ch/FEL2009/papers/tupc59.pdf
  8. Y. Saito, K. Hata, A. Takakura, J. Yotani, S. Uemura. Physica B 323, 1-4, 30 (2002)
  9. C. Li, G. Fang, X. Yang, N. Liu, Y. Liu, X. Zhao. J. Phys. D 41, 195401 (2008)
  10. J. Chen, J. Li, J. Yang, X. Yan, B.K. Tay, Q. Xue. Appl. Phys. Lett. 99, 17, 173104 (2011)
  11. Y. Gotoh, W. Ohue, H. Tsuji. J. Appl. Phys. 121, 23, 234503 (2017)
  12. K.A. Dean, B.R. Chalamala. Appl. Phys. Lett. 76, 3, 375 (2000)
  13. R. Bhattacharya, N. Karaulac, W. Chern, A.I. Akinwande, J. Browning. J. Vac. Sci. Technol. B 39, 2, 023201 (2021)
  14. V.B. Bondarenko, S.N. Davydov, P.G. Gabdullin, N.M. Gnuchev, A.V. Maslevtsov, A.A. Arkhipov. St. Petersburg Polytechnical University J.: Phys. Math. 2, 4, 306 (2016)
  15. S. Kolekar, S.P. Patole, S. Patil, J.B. Yoo, C.V. Dharmadhikari. Surf. Sci. 664, 76 (2017)
  16. L.N. Win, E.P. Sheshin, N.C. Kyaw, Z.Y. Lwin, W.Z. Hlaing. Adv. Mater. Technol. 4, 31 (2018)
  17. S.S. Baturin, S.V. Baryshev. Rev. Sci. Instruments 88, 3, 033701 (2017)
  18. P. Zhang, J. Park, S.B. Fairchild, N.P. Lockwood, Y.Y. Lau, J. Ferguson, T. Back. Appl. Sci. 8, 7, 1175 (2018)
  19. Y. Li, Y. Sun, D.A. Jaffray, J.T. Yeow. Nanotechnol. 28, 15, 155704 (2017)
  20. W. Liu, F. Zeng, L. Xin, C. Zhu, Y. He. J. Vacuum Sci. Technol. B 26, 1, 32 (2008)
  21. M. Kawasaki, Z. He, Y. Gotoh, H. Tsuji, J. Ishikawa. J. Vac. Sci. Technol. B 28, 2, C2A77 (2010)
  22. J.M. Bonard, J.P. Salvetat, T. Stockli, L. Forro, A. Chatelain. Appl. Phys. A 69, 3, 245 (1999)
  23. E.O. Popov, A.G. Kolosko, S.V. Filippov, E.I. Terukov. J. Vac. Sci. Technol. B 36, 2, 02C106 (2018)
  24. A.G. Kolosko, E.O. Popov, S.V. Filippov. Tech. Phys. Lett. 45, 3, 304 (2019)
  25. A.G. Kolosko, S.V. Filippov, E.O. Popov, S.A. Ponyaev, A.V. Shchegolkov. J. Vac. Sci. Technol. B 38, 6, 062806 (2020)
  26. A.G. Kolosko, V.S. Chernova, S.V. Filippov, E.O. Popov. Adv. Mater. Technol. 3, 18 (2020)
  27. D. Lysenkov, H. Abbas, G. Muller, J. Engstler, K.P. Budna, J.J. Schneider. J. Vac. Sci. Technol. B 23, 2, 809 (2005)
  28. K.N. Nikol'sky, A.S. Baturin, A.I. Knyazev, R.G. Chesov, E.P. Sheshin. ZhTF 74, 2, 110 (2004). (in Russian)
  29. J.H. Deng, Y.M. Yang, R.T. Zheng, G.A. Cheng. Appl. Surf. Sci. 258, 18, 7094 (2012)
  30. J. Li, X. Yan, G. Gou, Z. Wang. J. Chen. Phys. Chem. Chem. Phys. 16, 5, 1850 (2014)
  31. V.S. Bormashov, A.S. Baturin, K.N. Nikolskiy, R.G. Tchesov, E.P. Sheshin. Nucl.Instrum. Meth. Phys. Res. A 558, 1, 256 (2006)
  32. A.A. Kuznetzov, S.B. Lee, M. Zhang, R.H. Baughman, A.A. Zakhidov. Carbon 48, 1, 41 (2010)
  33. C. Barone, S. Pagano, H.C. Neitzert. Appl. Phys. Lett. 97, 15, 152107 (2010)
  34. A.G. Kolosko, E.O. Popov, S.V. Filippov. Tech. Phys. Lett. 40, 5, 438 (2014).

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru