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The Nature of Interface Recombination in Heterostructures Based on InAsSb(P) Solid Solutions
Kirilenko I. D.1, Romanov V. V.
2, Bazhenov N. L.
2, Trapeznikova I. N.
2, Mynbaev K. D.
2, Moiseev K. D.
2
1ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: idkirilenko@itmo.ru
Studies of optical transmittance and electroluminescence of heterostructures based on InAsSb(P) solid solutions were performed. Transmittance spectra investigation revealed the dependence of charge carrier concentration in the narrow-gap layer InAs1-ySby on InSb fraction y. It was shown that the increase of charge carrier concentration localized in potential wells at the heterointerface InAsSb/InAsSbP leads to the strong dipole formation, which makes interface transitions the prevalent channel of radiative recombination in such narrow-gap heterostructures. Keywords: InAsSb(P), optical transmittance, electroluminescence, interface transitions.
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