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Photoluminescence and electron paramagnetic resonance of ultrathin layers of nanosized porous silicon
Demidov E. S.1, Afanasev D. A.1, Demidova N. E.2, Nezhdanov A. V.
1, Mashin A. I.1
1Lobachevsky State University, Nizhny Novgorod, Russia
2Nizhny Novgorod State University of Architecture and Civil Engineering, Nizhny Novgorod, Russia
2Nizhny Novgorod State University of Architecture and Civil Engineering, Nizhny Novgorod, Russia
Email: demidov@phys.unn.ru, ada0799@yandex.ru, demidova_nataliya@mail.ru, nezhdanov@phys.unn.ru, mashin@unn.ru
For the first time the change of photoluminescence and electron paramagnetic resonance with increase in time of electrochemical formation of nanosized porous silicon since ultrathin layers on monocrystal Si plates p- and n+-type is experimentally investigated. Thus, for both variants of Si the red shift of photoluminescence spectra is revealed. The quantum-dimensional model as mechanism of cascade growth of porous silicon layers and the photoluminescence red shift is offered. According to electron paramagnetic resonance data of no radiating recombination Pb - centers the growth of silicon nanosized inclusions mass with porous silicon layer thickness on Si-n+ is established close to linear. Possibility of working out actual today manufacturing techniques from porous silicon of system silicon nanowires, immersed in the dielectric environment, is discussed. Keywords: Anode etching, porous silicon, ultrathin layers, photoluminescence, electron paramagnetic resonance, dimensional quantization, silicon nanowires.
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