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Charge transport mechanism in forming-free MgO-based memristor
Russian version
Gismatulin A. A.1, Gorshkov D. V.2, Gerasimov E. Y.3, Gritsenko V. A.1,4
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Katod LTD, Novosibirsk, Russia
3Boreskov Institute of Catalysis, Siberian Branch of RAS, Novosibirsk, Russia
4Novosibirsk State Technical University, Novosibirsk, Russia
Email: aagismatulin@isp.nsc.ru
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The charge transport mechanism was determined in the high-resistance and low-resistance states of a forming-free MgO-based memristor. The MgO-based memristor showed a memory window of about three orders of magnitude. It is established that the charge transport mechanism in a MgO-based memristor in the high-resistance and low-resistance states is the space-charge-limited current model. The trap parameters in the MgO-based memristor in the high-resistance (Nt=1.7·1018 cm-3) and low-resistance (Nt=0.8·1018 cm-3) states were determined. Keywords: forming-free, memristor, space-charge-limited current, charge transport.
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