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Surface morphology and growth processes of germanium films synthesized by solid-phase epitaxy on Fe3Si|Si(111)
Russian version
Lukyanenko A. V. 1, Tsarenko A. V.1, Yakovlev I. A.1, Tarasov A. S.1
1Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Email: lav@iph.krasn.ru, tsarienko.2001@mail.ru, tia@iph.krasn.ru
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This work investigates the structural properties of ferromagnet/semiconductor multilayer films synthesized on silicon substrates, specifically examining the growth processes of germanium films on Fe3Si during solid-phase epitaxy. It has been established that annealing of a nanocrystalline germanium layer with a thickness of less than 25 nm at a temperature of 370 oC leads to the formation of monocrystalline islands with identical crystallographic orientation. The influence of annealing time, germanium layer thickness, and combined synthesis methods on the crystallization processes has been determined. In the stationary regime, the surface diffusion length of germanium adatoms is approximately 1800 nm. Keywords: hybrid structures, thin films, molecular beam epitaxy, solid-phase epitaxy, high-energy electron diffraction, atomic force microscopy.
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