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NV- defects in silicon carbide for quantum magnetometry
Russian version
Nagalyuk S. S.1, Kazarova O. P.1, Kosach P. A.2, Mokhov E. N.1
1Ioffe Institute, St. Petersburg, Russia
2Institute of Physics, Kazan Federal University, Kazan, Russia
Email: siclab@mail.ioffe.ru
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The spin and optical properties of nitrogen-vacancy defects (NV- defects) in diamond have formed the basis for the development of opticallypumped solid-state quantum magnetometers based on this material. Significant progress has recently been achieved in the study of NV- defects in SiC, which are direct analogues of NV- defects in diamond. This paper presents the results of a study of the coherent properties of NV defects in SiC crystals with natural and reduced content of 29Si magnetic nuclei. It is shown that a decrease in the concentration of magnetic silicon isotopes can improve the coherent characteristics of NV centers. A comparative analysis of the effective transverse relaxation time (T2*) of NV defects in both types of matrices is performed to evaluate their suitability for application in quantum magnetometry, especially in the context of recent progress in the creation of highly stable NV defects in nanoscale SiC structures. Keywords: Aluminum nitride, p-type doping, diffusion of Beryllium, optical absorption.
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