Optical and photoelectric properties of multilayer GaN|InP structures formed by plasma chemical atomic layer deposition
Yarchuk E. Y.1, Uvarov A. V.2, Maksimova A. A.1, Gudovskih A. S.2
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: ernst_yarchuk@mail.ru
The results of a study of the possibility of using lattice-matched multilayer GaN|InP compositions with a silicon substrate to form an upper transition by plasmochemical atomic layer deposition are presented. Temperature dependences of dark conductivity and photoconductivity were obtained during studies, which made it possible to evaluate the photoelectric properties of films based on GaN|InP superlattices, as well as individual InP and GaN layers. The values of photoconductivity activation energies for GaN|InP structures in the range 0.17-0.25 eV and for individual InP and GaN layers - 0.1 and 0.4 eV, respectively, are obtained. Keywords: solar energy, indium phosphide, gallium nitride, photoconductivity, activation energy.
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