Physics of the Solid State
Volumes and Issues
Home » Physics of the Solid State » Year 2025, issue 12 » Article p. 2189
<<<>>>
Spectroscopic control of the energy gap of aluminum-doped vanadium oxide structures
Russian version
Ilinskiy A.V.1, Klimov V.A.1, Kononov A.A.2, Provotorov P.S.2, Fedorov D. L., Shadrin E. B.1
1Ioffe Institute, St. Petersburg, Russia
2Herzen State Pedagogical University of Russia, St. Petersburg, Russia
Email: shadr.solid@mail.ioffe.ru
PDF
It has been shown that doping strongly correlated compounds such as vanadium dioxide and vanadium pentoxide with 5 at.% Al narrows their band gaps and shortens the thermal extension of the Mott component of the complex semiconductor-metal phase transition. This results in a decrease in the semiconductor-metal phase transition temperature in VO2 from 67 oC to 62 oC. At the same time, for the limiting oxide V2O5, the decrease in the thermal extent of the Mott component of the phase transition caused by Al doping is accompanied only by a correlation narrowing of the optical width of the band gap due to the absence of the Peierls component of the complex phase transition in this limiting oxide. Keywords: dielectric spectroscopy, vanadium dioxide, semiconductor-metal phase transition, VO2 films, aluminum doping.
  1. V.K. Kazimova, Z.M. Zahrabekova, M. Zeynalova, G.H. Azhdarov. Rost kristallov 51, 192 (2007) (in Russian)
  2. N.F. Mott, E.A. Devis. Electron processis in noncristalline materials. Oxford (1971). 472 p
  3. E.M. Conwell. Phys. Rev. 103, 51 (1956)
  4. S. Iizuka, T. Nakayama. Jap. J. Appl. Phys. 55, 101301, (2016)
  5. P. Kofstad. Otklonenie ot stekhiometrii, diffuziya i elektroprovodnost v prostykh okislakh metallov. Mir, M. (1975). p. 396 (in Russian)
  6. A. Markose, D.D.P. Ravindran. Mater. Adv. 4, 3399 (2023)
  7. W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Haller. Phys. Rev. Lett. 82, 6, 1221 (1999)
  8. W. Shan, K.M. Yu, W. Walukiewicz. Appl. Phys. Lett. 75, 10, 1410 (1999)
  9. N.K. Morozova. Izoelektronnye primesi v poluprovodnikah v svete teorii antiperesekayushchihsya zon. Uch. pos. (2019). p. 202 (in Russian)
  10. M.H.P. Eshfold, F. Claisens, G.M. Fuedj. Chem. Soc. Rev. 33, 23 (2004)
  11. V.N. Andreev, V.A. Klimov, M.E. Kompan. FTT 67, 6. 998 (2025) (in Russian)
  12. A.V. Ilyinsky, R.A. Castro, V.A. Klimov, A.A. Kononov, I.O. Popova, E.B. Shadrin. FTT 66, 12, 2092 (2024) (in Russian)
  13. A.V. Ilinskiy, O.E. Kvashenkina, E.B. Shadrin. FTP 46, 4, 439, (2012) (in Russian)
  14. W. Bruckner, H. Operman, W. Reichelt, E.I. Terukow, A.F. Tschudnovskii, E. Wolf. Vanadiumoxide. A-V, Berlin (1983). 252 s
  15. C. Parker, W. Geiser. J. Am. Cerom. Soc., 73, [II], 3206 (1990)
  16. J.B. Goodenough. Solid State Chemistry 3, 4, 490 (1971)
  17. Himicheskaya enciklopediya v 5 t. Izd-vo "Bol'shaya rossijskaya enciklopediya", M. V. 5, p. 783 (1998) (in Russian)
  18. A. G.Thomas, W.R. Flavell, A.K. Mallick. Phys. Rev. B 75, 035105 (2007)
  19. V.V. Valkov, D.M. Dzebisashvili. FTT 51, 5, 833 (2009) (in Russian)
  20. R. Sakuma, T. Miyake, F. Aryasetiawan. Phys. Rev. B 78, 8, 075106 (2008)
  21. A.A. Minnekhanov. Fotoelektronnye processy v nanostrukturirovannyh materialah na osnove dioksida titana s paramagnitnymi tsentrami. Avtoref. diss. kand. f.-m.n. MGU im. M.V. Lomonosova, M. (2018). P. 134 (in Russian)
  22. W. Choi, A. Termin, M.R. Hoffann. J. Phys. Chemistry 98, 51, 13669 (1994)
  23. H.P. Hjalmarson, P. Vogl, D.J. Wolford, J.D. Dow. Phys. Rev. Lett. 44, 12, 810 (1980)
  24. M. Weyers, M. Sato, H. Ando. Jpn. J. Appl. Phys. 31, L853 (1992)
  25. J. Wu, W. Shan, W. Walukiewicz. Semicond. Sci. Technol. 17, 860 (2002)
  26. J.L. Bishop, M.D. Lane, M.D. Dyar, A.J. Brown. Clay Minerals 43, 35 (2008)
  27. J.P. Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Pederson, D.J. Singh, C. Fiolhais. Phys. Rev. B 46, 11, 6671 (1992)
  28. J.P. Perdew, K. Burke, M. Ernzerhof. Phys. Rev. Lett. 77, 18, 3865 (1996)
  29. B.M. Glinsky. Problemy informatiki 3, 72 (2013) (in Russian)
  30. M. Cococcioni. The LDA+U approach: A simple hubbard correction for correlated ground states. In E. Pavarini, E. Koch, F. Anders, M. Jarrell. Correlated Electrons: From Models to Materials Modeling and Simulation 2, 4, 1 (2012)
  31. A. Jovanovic, A. Dobrota, L. Rafailovic, S. Mentus, I. Pasti, B. Johansson, N. Skorodumova. Physical Chemistry / Chemical Physics 20, 109, 858 (2018)
  32. S. Grimme, S. Ehrlich, L. Goerigk. Journal of Computational Chemistry 32, 7, 1456 (2011)
  33. M. Giorgetti, S. Passerini, W.H. Smyrl, M. Berrettoni. Inorg. Chem. 39, 7, 1514 (2000)
  34. A.V. Il'inskij, E.B. Shadrin. FTT 64, 6, 702 (2022) (in Russian)
  35. A.V. Il'inskij, E.B. Shadrin. FTT 65, 3, 460 (2023) (in Russian)
Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru