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Differential tunneling conductance of the n-Bi2Te3-ySey ribbons obtained by melt spinning
Russian version
Lukyanova L. N. 1, Makarenko I. V.1, Usov O. A. 1, Novikov S. V. 1, Usov S. O. 1,2
1Ioffe Institute, St. Petersburg, Russia
2Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
Email: lidia.lukyanova@mail.ioffe.ru, igor.makarenko@mail.ioffe.ru, oleg.usov@mail.ioffe.ru, s.novikov@mail.ioffe.ru, s.usov@mail.ioffe.ru
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The spectra of differential tunneling conductance dIt/dU versus voltage U, measured by scanning tunneling spectroscopy (STS), were investigated in the ribbons of n-Bi2Te3-ySey (y=0.45) topological insulators formed by melt spinning process and in single-crystal samples with y=0.3. From the analysis of the dIt/dU spectra, which are proportional to the electronic density of states, the Dirac point energy ED and its local fluctuations Δ ED, the positions of the valence EV and conduction EC band edges, band gap energy Eg, and the surface concentration of Dirac fermions ns were determined. It was found that in the n-Bi2Te2.7Se0.3 single crystal, which possess higher Dirac point energy ED, the fermion surface concentration ns=2.8·1012 cm-2 is an order of magnitude higher than in the ribbons. At the same time the power factor in the single crystal is three times higher than in the ribbons. The defect levels associated with donor (TeBi) and acceptor (BiTe) antisite defects, as well as tellurium VTe and bismuth VBi vacancies, were identified within the band gap of the studied thermoelectrics. From the analysis of the STS spectra the additional valence-band subbands VBi and conduction-band subbands CBi were revealed. Keywords: bismuth telluride-based solid solutions, melt spinning, scanning tunneling spectroscopy, topological insulator, Dirac point, defects.
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