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Effects of carrier-substrate type on resistive and optical properties of AlGaAs/GaInAs light-emitting infrared diodes
Malevskaya A. V.
1, Kalyuzhnyy N. A.
1, Salii R. A.
1, Soldatenkov F. Y.
1, Malevskii D. A.
1, Andreev V. M.
1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, nickk@mail.ioffe.ru, r.saliy@mail.ioffe.ru, f.soldatenkov@mail.ioffe.ru, dmalevsky@scell.ioffe.ru, vmandreev@mail.ioffe.ru
Investigations of various designs of light-emitting infrared (840 nm) diodes based on AlGaAs/GaInAs heterostructures with multiple quantum wells, grown by metalorganic vapor-phase epitaxy, have been carried out. The decrease of optical radiation losses in light-emitting diodes has been achieved by including multilayer combined reflectors into the design by transferring thin layers of the heterostructure onto a carrier-substrate based on a semiconductor material (Si, GaAs) or metal (Cu, Au). Analyzed was the influence of device designs on the light-emitting diodes characteristics. Maximum efficiency values of 46 % at a current density of 10-20 A/cm2 were achieved in devices on a GaAs carrier-substrate. The decrease of resistive losses and increase of optical power up to 730 mW at an operating current of 1.2 A were achieved in devices on a metal currier-substrate. Keywords: infrared light-emitting diode, AlGaAs/GaInAs heterostructure, currier-substrate.
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