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Modification of AlGaN/GaN transistor structure parameters by passivation and hydrogen plasma treatment
Russian version
A.V. Kovalchuk 1, V.E. Zemlykov , S.I. Karcev , D.S. Shpakov , S. Yu. Shapoval 1
1Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia
Email: anatoly-fizmat@mail.ru
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Efficiency of passivation of AlGaN/GaN transistor structures by low-temperature silicon nitride, HxSirNzHy, is demonstrated. Significant increase in the slope of current-voltage curve, saturation current and power-added efficiency is shown. Effective bulk hydrogenation process of HxSirNzHy /AlGaN/GaN transistor structures was developed and includes: modification of charge states in the volume of HxSirNzHy and states associated with the HxSirNzHy /AlGaN interface, and hydrogen atom passivation of point defects of the crystalline structure in the epitaxial AlGaN and GaN layers. Silicon nitride passivation and hydrogenation processes were developed on the basis of an electron cyclotron resonance plasma technology. Hydrogenation process is an effective and simple solution for compensation of negative thermal destruction (depassivation) processes occurring at (>600 oC) stages in the AlGaN high electron mobility transistor process cycle. Keywords: AlGaN HEMTs, 2DEG, electron cyclotron resonance, ECR plasma, trap state passivation, silicon nitride, semiconductor structure hydrogenation.
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