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Bridge-type contact systems in InGaAs/InP photovoltaic converters
Russian version
Malevskaya A. V. 1, Kalyuxhnyy N. A. 1, Il'inskaya N.D. 1, Soldatenkov F. Y. 1, Pivovarova A. A. 1, Salii R. A. 1, Lebedeva N. M.1, Levin R.V. 1, Epoletov V. S. 1, Pokrovskii P. V. 1, Malevskii D. A. 1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, nickk@mail.ioffe.ru, Nataliya.Ilynskaya@mail.ioffe.ru, f.soldatenkov@mail.ioffe.ru, pivovarova.antonina@gmail.com, r.saliy@mail.ioffe.ru, natali_lebedeva@mail.ioffe.ru, lev@vpegroup.ioffe.ru, vadep@mail.ioffe.ru, P.Pokrovskiy@mail.ioffe.ru, dmalevsky@scell.ioffe.ru
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Methods of reducing resistive losses and capacity of photovoltaic converters of laser radiation (1.55 μm) based on InGaAs/InP heterostructures, grown by metalorganic vapor-phase epitaxy, have been carried out. Various contact systems: NiCr/Ag/Au, AgMn/Ni/Au, Cr/Au/Ni/Au and Pd/Ge/Au, Au(Ge)/Ni/Au to InGaAs and InP layers of p- and n-type conductivity, respectively, have been investigated. Analyzed were the influence of composition and modes of ohmic contacts formation on the contact resistivity and current-voltage characteristics of the devices. Minimum values of specific contact resistivity have been archived by Pd/Ge/Au ohmic contact evaporation on n+-InGaAs (~10-7 Ω·cm2) and NiCr/Ag/Au on p-InGaAs (-10-6 Ω·cm2). A design has been developed for photovoltaic converts with a photosensitive area of 30 μm in diameter with a bridge-type contact system, which allowed to reduce the p-n-junction area in a photocell and, accordingly, its capacity. Keywords:: InGaAs/InP photovoltaic converter, contact systems, resistive losses.
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