Optimization of metal-induced laser-stimulated crystallization of silicon films on a flexible substrate by varying the thickness of the aluminum layer
Volkovoynova L. D. 1, Serdobintsev A. A. 1
1Saratov State University, Saratov, Russia
Email: loris.volkoff@gmail.com, SerdobintsevAA@sgu.ru

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The influence of the thickness of the aluminum layer on the degree of silicon crystallization after irradiation of a thin-film Al/Si structure on a flexible polyimide substrate by pulsed infrared laser radiation is studied. Keywords: crystallization of amorphous silicon, metal-induced crystallization, laser-stimulated crystallization, infrared laser radiation, flexible electronics.
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