Physics of the Solid State
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Two-layer logic elements for classic cryogenic computers
Gurovich B. A.1, Prikhodko K. E. 1,2, Kutuzov L. V.1, Goncharov B. V.1, Komarov D. A.1, Malieva E. M.1
1National Research Center “Kurchatov Institute”, Moscow, Russia
2National Research Nuclear University “MEPhI”, Moscow, Russia

In this paper, for the first time, two-layer logic elements "NOT", "AND", "OR" and "NOR" were manufactured, in which the heating element of a nanowire in one layer is located in the place where the heated element of another superconductive nanowire is located in a nearest NbN layer. The film thickness of NbN (5-7 nm) was used to form of superconducting nanowires in different layers, and the thickness of Al2O3 (25 nm) was used as an interlayer dielectric. The paper shows the design of logic elements, and also demonstrates their operation in pulse mode. The use of multilayer structures without galvanic coupling between nanowires allows the design of multi-level logic devices. Keywords: NbN thin superconducting films, contactless switching of the superconductor state, cryoelectronic devices, integrated cryogenic resistors, logic elements "NOT"/"AND"/"OR"/"NOR", cryogenic computers.
  1. B.A. Gurovich, K.E. Prikhodko, L.V. Kutuzov, B.V. Goncharov. FTT 62, 9, 1420 (2020) (in Russian)
  2. B.A. Gurovich, B.V. Goncharov, M.M. Dementyeva, K.E. Prikhodko, L.V. Kutuzov, D.A. Komarov, A.G. Domantovsky. IOP Conf. Ser. Mater. Sci. Eng. 699, 1, 012016 (2019)
  3. B.A. Gurovich, K.E. Prikhodko, A.G. Domantovsky, V.L. Stolyarov, D.A. Komarov, E.A. Kuleshova, L.V. Kutuzov. Method for transferring the superconductor in the logic elements of nanosized electronic devices from a superconducting state to a normal one. RF Patent 2674063 (2018)
  4. D.A. Buck. Proc. IRE 44, 4, 482 (1956)
  5. V.L. Newhouse, J.W. Bremer. J. Appl. Phys. 30, 9, 1458 (1959)
  6. K.K. Likharev. Physica C 482, 6 (2012)
  7. K.K. Likharev, V.K. Semenov. IEEE Trans. Appl. Supercond. 1, 1, 3 (1991)
  8. M.H. Volkmann, A. Sahu, C.J. Fourie, O.A. Mukhanov. Supercond. Sci. Technol. 26, 1, 015002 (2013)
  9. M.H. Volkmann, I.V. Vernik, O.A. Mukhanov. IEEE Trans. Appl. Supercond. IEEE 25, 3, 1301005 (2015)
  10. A.N. McCaughan, K.K. Berggren. Nano Lett. 14, 10, 5748 (2014)
  11. A.N. McCaughan, N.S. Abebe, Q.Y. Zhao, K.K. Berggren. Nano Lett. 16, 12, 7626 (2016)
  12. Q.Y. Zhao, E.A. Toomey, B.A. Butters, A.N. McCaughan, A.E. Dane, S.-W. Nam, K.K. Berggren. Supercond. Sci. Technol. IOP Publishing 31, 3, 035009 (2018)
  13. R. Baghdadi, J.P. Allmaras, B.A. Butters, A.E. Dane, S. Iqbal, A.N. McCaughan, E.A. Toomey, Q.-Y. Zhao, A.G. Kozorezov, K.K. Berggren. Phys. Rev. Appl. 14, 5, 1 (2020)
  14. B.V. Goncharov, B.A. Gurovich, K.E. Prikhodko, M.M. Dementyeva, V.L. Stolyarov, E.D. Olshansky, A.G. Domantovsky, L.V. Kutuzov, E.M. Malieva, A.A. Cherepanov. IOP Conf. Ser. Mater. Sci. Eng. 1005, 1, 012023 (2020)
  15. D.I. Dolgiy, E.D. Olshansky, E.P. Ryazantsev. Konversiya v mashinostroenii 3-4, 119 (1999) (in Russian)
  16. B.A. Gurovich, K.E. Prikhodko, M.A. Tarkhov, A.G. Domantovsky, D.A. Komarov, B.V. Goncharov, E.A. Kuleshova. Micro. Nanosyst. 7, 3, 172 (2015)
  17. B.A. Gurovich, M.A. Tarkhov, K.E. Prikhodko, E.A. Kuleshova, D.A. Komarov, V.L. Stolyarov, E.D. Olshansky, B.V. Goncharov, D.A. Goncharova, L.V. Kutuzov, A.G. Domantovsky. Ros. nanotekhnologii 9, 7-8, 36 (2014) (in Russian)
  18. K.E. Prikhodko, B.A. Gurovich, M.M. Dement'eva. Conf. Ser. Mater. Sci. Eng. 130, 1, 012046 (2016)
  19. B.A. Gurovich, K.E. Prikhodko, L.V. Kutuzov, B.V. Goncharov, D.A. Komarov, E.M.Maliyeva. FTT 63, 9, 1241 (2021) (in Russian)

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