Вышедшие номера
EPR of Defects in Semiconductors: Past, Present, Future
Watkins G.D.1
1Department of Physics, Lehigh University, Bethlehem, PA, USA
Email: gdw0@lehigh.edu
Выставление онлайн: 19 апреля 1999 г.

Important physiсal concepts learned from early EPR studies of defects in silicon are reviewed. Highlighted are the studies of shallow effective-mass-liked donors and acceptors by Feher, of deep transition element impurities by Ludwig and Woodbury, and of vacancies and interstitials by Watkins et al. It is shown that the concepts learned in silicon translate remarkable well to the corresponding defects in the other elemental and compound semiconductors. The introduction over the intervening years of sensitive optical and electrical detection methods, and the recent progress in single defects detection insure the continued vital role of EPR in the future.
  1. G. Feher. Phys. Rev. 103, 834 (1956)
  2. G. Feher. Phys. Rev. 114, 1219 (1959)
  3. W. Kohn, J.M. Luttinger. Phys. Rev. 97, 1721 (1955); ibid. 98, 915 (1955)
  4. G. Feher, J.C. Hensel, E.A. Gere. Phys. Rev. Lett. 5, 309 (1960)
  5. H. Neubrand. Phys. Stat. Sol. (b) 86, 269 (1978)
  6. G.W. Ludwig, H.H. Woodbury. In: Solid State Physics. Vol. 13 / Ed. by F. Seitz and D. Turnbull. Academic Press, N.Y. (1962). P. 223
  7. J. Schneider, U. Kaufmann, W. Wilkening, M. Baeumler, F. Kohl. Phys. Rev. Lett. 59, 240 (1987)
  8. L.S. Vlasenko, N.T. Son, A.B. van Oosten, C.A.J. Ammerlaan, A.A. Lebedev, E.S. Taptygov, V.A. Khramtsov. Sol. Stat. Commun. 73, 393 (1990)
  9. G.D. Watkins, P.M. Williams. Phys. Rev. B52, 16 575 (1995)
  10. G.D. Watkins. In: Deep Centers in Semiconductors / Ed. by S. Pantelides. Gordon and Breach, N.Y. (1986). Ch. 3. (This provides a detailed description of the properties of the vacancy in silicon.)
  11. G.D. Watkins. In: Electronic Structure and Properties of Semiconductors / Ed. by W. Schroter. Materials Science and Technology. Vol. 4. VCH, Weinheim (1991). Ch. 4. (This includes a review of vacancies and interstitials in all semiconductors.)
  12. G.D. Watkins. In: Defects and Diffusion in Silicon Processing / Ed. by T.D. de la Rubia, S. Coffa, P.A. Stolk, C.S. Rafferty. MRS Symp. Proc. Vol. 469. Pittsburgh (1997). P. 139. (This is a concise review of vacancies and interstitials in silicon.)
  13. G.A. Baraff, E.O. Kane, M. Schluter. Phys. Rev. B21, 3563 (1980)
  14. E. Tarnow. Europhys. Lett. 16, 449 (1991)
  15. R. Car, P.J. Kelly, A. Oshiyama, S.T. Pantelides. In: 13th Conf. Def. Semicond. / Ed. by L.C. Kimeling and J.M. Parsey, Jr., Metallurgical Soc. of AIME, Warrendale (1985). P. 269
  16. Y. Bar-Yam, J.D. Joannopoulos. In: 13th Conf. Def. Semicond. / Ed. by L.C. Kimeling and J.M. Parsey, Jr., Metallurgical Soc. of AIME, Warrendale (1985). P. 261
  17. T.A. Kennedy, N.D. Wilsey, J.J. Krebs, G.H. Strauss. Phys. Rev. Lett. 50, 1281 (1983)
  18. J. Isoya, H. Kanda, Y. Uchida, S.C. Lawson, S. Yamasaki, H. Itoh, Y. Morita. Phys. Rev. B45, 1436 (1992)
  19. H. Itoh, M. Yoshikawa, I. Nashiyama, E. Sakuma. IEEE Trans. NS37, 1732 (1990)
  20. F. Rong, G.D. Watkins. Phys. Rev. Lett. 58, 1486 (1987)
  21. K.H. Chow, G.D. Watkins. Phys. Rev. Lett. 81, 2084 (1998)
  22. A. Gruber, A. Drabenstedt, C. Tietz, L. Fleury, J. Wrachtrup, C. von Borczyskowski. Science 276, 2012 (1997)

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