Вышедшие номера
Photoelectrically Detected Magnetic Resonance Spectroscopy of the Excited Triplet States of Point Defects in Silicon
Vlasenko L.S.1
1A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Выставление онлайн: 19 апреля 1999 г.

Highly sensitive methods of the detection of the electron paramagnetic resonance (EPR) spectra based on the spin-dependent microwave photoconductivity were applied for investigation of the structural defects in irradiated silicon. The parameters of the EPR spectra of the excited triplet states of radiation defects were determined and several models of the carbon related defects were supposed.
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