ФТТ, 2004, том 46, выпуск 12

 Содержание  Предыдущая статья  Следующая статья  Поиск  

Peculiarities of gallium crystallization in confined geometry

B.F.Borisov*, E.V.Charnaya*,**, A.V.Gartvik*, ChengTien**, Yu.A.Kumzerov***, V.K.Lavrentev****

* Institute of Physics, St. Petersburg State University,
198504 Petrodvorets, St. Petersburg, Russia
** Department of Physics, National Cheng Kung University,
70101 Tainan, Taiwan
*** A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences,
194021 St. Petersburg, Russia
**** Institute of High-Molecular Combinations,
199004 St. Petersburg, Russia
E-mail: charnaya@mail.ru

(Received 16 March 2004)

The freezing and melting phase transitions for gallium embedded into a porous glass with pore size of about 8 nm were studied using acoustic, NMR, and x-ray techniques. It was shown that the broadened solidification and melting transitions upon deep cooling until complete freezing at 165 K were due to formation of beta-Ga within pores. The offset of confined beta-Ga melting was lowered by about 21 K compared to the bulk beta-Ga melting point. Both melting and freezing in pores were irreversible. The fulfillment of some special thermal conditions led to gallium crystallization into other modifications. The role of heterogeneous crystallization in freezing of confined gallium is discussed.

The present work was partially supported by the National Science Council of Taiwan under Grant 91-2112-M-006-017.

 PDF версия (187Kb)   Другие выпуски  Другие журналы   Помощь 
Copyright (C) 2004, Коллектив авторов  Разработано...  webmaster