ФТТ, 2004, том 46, выпуск 1

 Содержание  Предыдущая статья  Следующая статья  Поиск  

Plasmon induced terahertz absorption and photoconductivity in a grid-gated double-quantum-well structure

V.V.Popov, T.V.Teperik, O.V.Polischuk, X.G.Peralta*, S.J.Allen*, N.J.M.Horing**, M.C.Wanke***

Institute of Radio Engineering and Electronics (Saratov Division), Russian Academy of Sciences,
410019 Saratov, Russia
* Center for Terahertz Science and Technology, University of California, Santa Barbara,
California 93106, USA
** Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken,
New Jersey 07030, USA
*** Sandia National Laboratories, Albuquerque,
New Mexico 87185, USA

The terahertz (THz) absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effect transistor structure is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of THz photoconductivity in such a structure.

At the Institute of Radio Engineering and Electronics (Saratov Division) this work was supported by the Russian Foundation for Basic Research (Grant 03-02-17219). The work of X.G.P. and S.J.A. was supported by the ONR MFEL program, the DARPA/ONR THz Technology, Sensing and Satellite Communications Program, the ARO through Science and Technology of Nano/Molecular Electronics: Theory, Simulation, and Experimental Characterization and the Sandia National Laboratory. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. N.J.M.H. gratefully acknowledges support from the U.S. Department of Defense, DAAD 19-01-1-0592. T.V.T. thanks INTAS for support (Grant YSF 2002-153).

 PDF версия (169Kb)   Другие выпуски  Другие журналы   Помощь 
Copyright (C) 2004, Коллектив авторов  Разработано...  webmaster