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Plasmon induced terahertz absorption and photoconductivity in a grid-gated double-quantum-well structure
Popov V.V.1, Teperik T.V.1, Polischuk O.V.1, Peralta X.G.2, Allen S.J.2, Horing N.J.M.3, Wanke M.C.4
1Institute of Radio Engineering and Electronics (Saratov Division), Russian Academy of Sciences, Saratov, Russia
2Center for Terahertz Science and Technology, University of California, Santa Barbara, California, USA
3Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey, USA
4Sandia National Laboratories, Albuquerque, New Mexico, USA
Выставление онлайн: 20 декабря 2003 г.

The terahertz (THz) absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effect transistor structure is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of THz photoconductivity in such a structure. At the Institute of Radio Engineering and Electronics (Saratov Division) this work was supported by the Russian Foundation for Basic Research (Grant 03-02-17219). The work of X.G.P. and S.J.A. was supported by the ONR MFEL program, the DARPA/ONR THz Technology, Sensing and Satellite Communications Program, the ARO through Science and Technology of Nano/Molecular Electronics: Theory, Simulation, and Experimental Characterization and the Sandia National Laboratory. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. N.J.M.H. gratefully acknowledges support from the U.S. Department of Defense, DAAD 19-01-1-0592. T.V.T. thanks INTAS for support (Grant YSF 2002-153).
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