Volumes and Issues
Investigation of light-current characteristics of InGaN/GaN heterostructure light-emitting diodes in different spectral regions
Sergeev V.A. 1, Frolov I. V. 1,2, Radaev O.A. 1
1Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch), Russian Academy of Sciences, Ulyanovsk, Russia
2Ulyanovsk State Technical University, Ulyanovsk, Russia
Email: sva@ulstu.ru, ilya-frolov88@mail.ru, oleg.radaev.91@mail.ru

PDF
The light-current characteristics of ultraviolet, blue, and green LEDs based on InGaN/GaN heterostructures were measured in different regions of the emission spectrum with a spectral resolution of approximately 1.5 nm. Based on the results of measuring and approximating the light-current characteristics with various functions, the threshold current, the current value at which the maximum internal quantum efficiency is reached, and the parameter determining the degree of nonlinearity of the light-current characteristic in the low-current range were determined. It was found that for ultraviolet LEDs, all three parameters depend weakly on the emission spectrum wavelength. For green and blue LEDs, these parameters differ in the short- and long-wavelength regions of the spectrum, and this difference is greater for green LEDs than for blue LEDs. Differences in the parameters of LEDs of different emission colors based on InGaN/GaN heterostructures with quantum wells are explained by differences in concentrations and the nonuniform distribution of indium in the quantum wells of the heterostructure. Keywords: LED heterostructure, emission spectra, light-current characteristics, threshold current, current of maximum quantum efficiency.
  1. A.R. Rasul, K.N. Orlova. Vestnik Natsionalnogo issledovatelskogo yadernogo universiteta "MIFI", 13 (1), 52 (2024) (in Russian). DOI: 10.26583/vestnik.2024.308
  2. M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, B. Hahn. J. Appl. Phys., 106, 114508 (2009). DOI: 10.1063/1.3266014
  3. D.S. Meyaard, G.-B. Lin, J. Cho, E.F. Schubert. Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies and Applications (Woodhead Publishing, 2014), p. 279--300. DOI: 10.1533/9780857099303.2.279
  4. M.A. Mintairov, V.V. Evstropov, N.A. Kalyuzhny, D.A. Malevsky, S.A. Mintairov, M.Z. Shvarts. Opt. i spektr., 132 (12), 1214 (2024) (in Russian). DOI: 10.61011/OS.2024.12.59794.6601-24
  5. A.V. Gradoboev, K.N. Orlova, F.F. Zhamaldinov. Pribory i tekhnika eksperimenta, 1, 80 (2023) (in Russian). DOI: 10.56304/S2304487X21060080
  6. N. Renso, C. De Santi, A. Caria, F. Dalla Torre, L. Zecchin, G. Meneghesso, E. Zanoni, M. Meneghini. J. Appl. Phys., 127, 185701 (2020). DOI: 10.1063/1.5135633
  7. C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, X. Xu. Sci. Rep., 7, 15301 (2017). DOI: 10.1038/s41598-017-15561-9
  8. A.M. Ivanov, A.V. Klochkov. Opt. i spektr., 133 (4), 390 (2025) (in Russian). DOI: 10.61011/OS.2025.04.60535.7296-24
  9. A.V. Klyuev, A.V. Yakimov. Physica B: Condensed Matter, 440, 145 (2014). DOI: 10.1016/j.physb.2014.01.021
  10. A.V. Klyuev. Nanomaterialy i nanostruktury-XXI vek, 5 (1), 42 (2014) (in Russian)
  11. I. Frolov, V. Sergeev, O. Radaev. Poluprovodnikovaya svetotekhnika, 1, 12 (2023) (in Russian)
  12. O.A. Radaev, I.V. Frolov, V.A. Sergeev, S.A. Zaytsev. Kontrol. Diagnostika, 28 (7), 61 (2025) (in Russian). DOI: 10.14489/td.2025.07.pp.061-066
  13. I.V. Frolov. Radioelektronika. Nanosistemy. Informatsionnyie tekhnolgii, 16 (4), 441 (2024) (in Russian). DOI: 10.17725/rensit.2024.16.441
  14. O.A. Radaev, V.A. Sergeev, I.V. Frolov. Izmeritelnaya tekhnika, 8, 42 (2019) (in Russian). DOI: 10.32446/0368-1025it.2019-8-42-46
  15. V.A. Sergeev, O.A. Radaev, I.V. Frolov. Pribory i tekhnika eksperimenta, 6, 103 (2023) (in Russian). DOI: 10.31857/S0032816223060071
  16. L.W. Xu, K.Y. Qian. IEEE Photonics J., 9 (4), 8201309 (2017). DOI: 10.1109/JPHOT.2017.2703851
  17. S.G. Nikiforov. Razrabotka sredstv izmereniy i metodov kontrolya parametrov poluprovodnikovykh izluchateley na osnove soedineniy AIIIBV, ispolzuemykh v vysokonadezhnykh priborakh. Dokt. dis. (Moskovsky institut elektronnoy tekhniki, M., 2015) (in Russian)
  18. A. Di Vito, A. Pecchia, A. Di Carlo, M. Auf der Maur. Japan. J. Appl. Phys., 58, SCCC03 (2019). DOI: 10.7567/1347-4065/ab06ba
  19. R. Butte, L. Lahourcade, T.K. Uvzdavinys, G. Callsen, M. Mensi, M. Glauser, G. Rossbach, D. Martin, J.-F. Carlin, S. Marcinkevivcius, N. Grandjean. Appl. Phys. Lett., 112 (3), 032106 (2018). DOI: 10.1063/1.5010879
Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru